Review of BJT and FET Principles and Operations

The approximate voltage across the forward-biased base-emitter junction of a Ge BJT is

• 0 V
• 0.7 V
• 0.3 V
• VBB

In an NPN transistor, the N regions are

• base and emitter
• base and collector
• emitter and collector
• base and ground

When the transistor is in cutoff, VCE is

• o V
• equal to VBE
• minimum
• equal to VCC

The βDC of a transistor is its

• current gain
• voltage gain
• power gain
• internal resistance

When a transistor is conducting as much as it can, it is said to be

• in a state of cutoff
• in a state of saturation
• in a state of reverse bias
• in a state of avalanche breakdown

It is constructed with three doped semiconductor regions separated by two pn-junctions

• BJT
• OJT
• BUT
• BOT

BJT stands for

• Biomedical Junction Table
• Binary Justified Transistor
• Bipolar Junction Transistor
• Bipolar Junction Thyristor

The region of a BJT that is lightly doped and very thin compared to other two regions

• base
• emitter
• collector
• common

The heavily doped region of a BJT

• collector
• base
• emitter
• common

The moderately doped region of a BJT

• emitter
• collector
• common
• base