Review of BJT and FET Principles and Operations
Authored by robert luna
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University - Professional Development
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1.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
The approximate voltage across the forward-biased base-emitter junction of a Ge BJT is
0 V
0.7 V
0.3 V
VBB
2.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
In an NPN transistor, the N regions are
base and emitter
base and collector
emitter and collector
base and ground
3.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
When the transistor is in cutoff, VCE is
o V
equal to VBE
minimum
equal to VCC
4.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
The βDC of a transistor is its
current gain
voltage gain
power gain
internal resistance
5.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
When a transistor is conducting as much as it can, it is said to be
in a state of cutoff
in a state of saturation
in a state of reverse bias
in a state of avalanche breakdown
6.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
It is constructed with three doped semiconductor regions separated by two pn-junctions
BJT
OJT
BUT
BOT
7.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
BJT stands for
Biomedical Junction Table
Binary Justified Transistor
Bipolar Junction Transistor
Bipolar Junction Thyristor
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