Materials Science

____________ are the charge carriers in N- type semiconductors

• electrons

• protons

• holes

• neutrons

P, Sb, As doped with pure Si are the examples of

• P-type semiconductors

• Penta valent impurities

• Intrinsic semiconductors

• N-type semiconductors

For intrinsic semiconductor, the number of electrons in the conduction band __________ the number of holes in the valence band.

• is equal to

• will be less than

• will be greater than

• will be less than or equal to

In N-type Semiconductors, the energy level of the donor impurities lies

• just above the valence band

• just below the conduction band

• at the centre of the energy band gap

• inside the conduction band

In, B, Al doped with pure Si are the examples of

• Trivalent impurities

• P-type semiconductors

• N-type semiconductors

• Intrinsic semiconductors

The unit for mobility of the electron is

• Wbm^-2

• m²V^-1S^-1

• eV

• m^-3

In P-type Semiconductors, the energy level of the acceptor impurity lies

• just below the Conduction band

• at the centre of the Energy band gap

• just above the valence band

• inside the valence band

Drift velocity per unit electric field is called as

• Conductivity

• Mobility

• Current density

• resistivity

The process of adding impurities to a pure semiconductor is called

• mixing

• doping

• diffusing

• refining

The pure Si and Ge Semiconducting materials have ___________ bonds.

• ionic

• covalent

• hydrogen

• metallic