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Doping Part one

Authored by Jafar Abdallah

Physics

12th Grade

Used 54+ times

Doping Part one
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15 questions

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1.

MULTIPLE CHOICE QUESTION

1 min • 1 pt

Dopants increase the conductivity of

semiconductors by _____.

increasing the forbidden gap

turning them into insulators

adding net charge to the semiconductor

making extra electrons or holes available

turning them into intrinsic semiconductors

2.

MULTIPLE CHOICE QUESTION

1 min • 1 pt

A hole refers to ______.

a proton

a positively charged electron

a microscopic defect in a solid

an electron which has somehow lost its

charge

the absence of an electron in an otherwise

filled band

3.

MULTIPLE CHOICE QUESTION

1 min • 1 pt

Which of the following is/are true for an intrinsic

semiconductor?

I. Pure semiconductor

II. Have low conductivity

III. Conducts due to thermally freed electrons

I only

II only

III only

I and III

I, II and III

4.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Which of the following elements has the correct

number of valance electrons to be used as a dopant

for an 𝑛 −type semiconductor?

Beryllium (𝑍 = 4)

Boron (𝑍 = 5)

Nitrogen (𝑍 = 7)

Aluminum (𝑍 = 13)

None of the above

5.

MULTIPLE CHOICE QUESTION

45 sec • 1 pt

How do dopants increase the conductivity of

semiconductors?

They add net charge to the semiconductor

They increase the forbidden gap

They make extra electrons or holes

available

They turn them into intrinsic

semiconductors

They always decrease the number of

charge carriers

6.

MULTIPLE CHOICE QUESTION

45 sec • 1 pt

Dopants are used to _____ semiconductors.

increase the conductivity of extrinsic

increase the heat generated by

increase the conductivity of intrinsic

decrease the heat generated by

increase the heat generated by

7.

MULTIPLE CHOICE QUESTION

45 sec • 1 pt

Conduction is increased in an 𝑛 −type

semiconductor by _____.

increased applied electrical field

decreased applied electrical field

the availability of extra holes

the availability of donor electrons

the availability of extra holes and donor

electrons

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