Thyristor1

The Power MOSFET combines the areas of _______ & _________

• semiconductor & TTL

• field effect & MOS technology

• mos technology & CMOS technology

• none of the mentione

Choose the correct statement

• PMOSFET is a uncontrolled device

• PMOSFET is a voltage controlled device

• PMOSFET is a current controlled device

• PMOSFET is a temperature controlled device

In the transfer characteristics of a PMOSFET, the threshold voltage is the measure of the

• minimum voltage till which temperature is constant

• minimum voltage to turn off the device

• minimum voltage to induce a n-channel for conduction

• none of the above mentioned is true

The output characteristics of a PMOSFET, is a plot of

• Id as a function of Vgs with Vds as a parameter

• Id as a function of Vds with Vgs as a parameter

• Ig as a function of Vgs with Vds as a parameter

• Ig as a function of Vds with Vgs as a parameter

IGBT possess

• low input impedance

• high input impedance

• high on-state resistance

• second breakdown problems

In IGBT, the p+ layer connected to the collector terminal is called as the

• drift layer

• body layer

• injection layer

• collector Layer

The voltage blocking capability of the IGBT is determined by the

• injection layer

• body layer

• metal used for the contacts

• drift layer

An SCR has three terminals viz ……………

cathode, grid Anode, cathode, drain None of the above

• Cathode, anode, gate

• Anode, cathode, grid

• Anode, cathode, drain

• None of the above

An SCR behaves as a ……………. switch

• Mechanical

• Bidirectional

• Unidirectional

• None of the above

In the normal operation of an SCR, anode is …………… w.r.t. cathode

• At zero potential

• Negative

• Positive

• None of the above