Find the odd one

• Schottky Diode

• Zener Diode

• General Purpose Diode

• Fast Recovery Diode

IGBT full form?

• Insulated Gate Bipolar Transistor

• Isolated Gate Bipolar Transistor

• Intrensic Gate Bipolar Transistor

• Isolated Gate Bivalent Transistor

IGBT is made by combining

• Transistor and Diode

• MOSFET and Diode

• Transistor and MOSFET

• MOSFET and Transistor

Which are the terminals of IGBT

• anode, cathode and gate

• Emitter, Collector and Base

• Emitter, Collector and Gate

• Drain, Source and Gate

Comment on the figure

• for a diode, trr will be less if forward current is less

• trr is independent on the forward current

• ta will be same for any value of forward current

• ta and tb will be same always

An IGBT is also know as

• MOIGT (Metal oxide insulated gate transistor)

• COMFET (Conductively modulated FET)

• GEMFET (Grain modulated FET)

• All of the mentioned

IGBT possess

• low input impedanc

• high input impedance

• high on-state resistance

• second breakdown problems

The controlling parameter in IGBT is ______

• Gate current

• Gate Emitter Voltage

• Load current

• VCE

In IGBT, the n– layer above the p+ layer is called as

• Drift layer

• Injection layer

• Body layer

• Collector Layer

The major drawback of the first generation IGBT is

• latch-up problems

• noise & secondary breakdown problems

• sluggish operation

• latch-up & secondary breakdown problems