
ECE411_CMOS
Authored by Sameh Ibrahim
Science
University
Used 4+ times

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5 questions
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1.
MULTIPLE SELECT QUESTION
45 sec • 1 pt
Silicon Nitride is used in modern technologies
for LOCOS
As a good masking layer
to form spacers
as a gate
2.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
Trench are filled by oxide through
CVD
PVD
Wet oxidation
3.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
The bulk connection of the NMOS is implanted with
the source and drain of the PMOS
The source and drain of the NMOS
The bulk connection of the PMOS
4.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
The mask of PMOS VT adjust
is always the same as the NWELL mask
is sometimes the same as the NWELL mask
is the same as the NMOS VT adjust
5.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
The fins of the FinFET are implemented by
SADP
wet etching
RIE etching
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