PDF - PAGE 3 QUESTION AND ANSWER

PDF - PAGE 3 QUESTION AND ANSWER

1st - 3rd Grade

16 Qs

quiz-placeholder

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PDF - PAGE 3 QUESTION AND ANSWER

PDF - PAGE 3 QUESTION AND ANSWER

Assessment

Quiz

Instructional Technology

1st - 3rd Grade

Medium

Created by

shanil Thrippanikkara

Used 3+ times

FREE Resource

16 questions

Show all answers

1.

MULTIPLE CHOICE QUESTION

30 sec • 5 pts

The MOSFET combines the areas of _______ & _________

field effect & MOS technology A

semiconductor & TTL

mos technology & CMOS technology

none of the mentioned

2.

MULTIPLE CHOICE QUESTION

30 sec • 5 pts

Which of the following terminals does not belong to the MOSFET?

Drain

Gate

base

Source

3.

MULTIPLE CHOICE QUESTION

30 sec • 5 pts

Choose the correct statement

MOSFET is a uncontrolled device

MOSFET is a voltage controlled device

MOSFET is a current controlled device

MOSFET is a temperature controlled device

4.

MULTIPLE CHOICE QUESTION

30 sec • 5 pts

Choose the correct statement

MOSFET is a unipolar, voltage controlled, two terminal device

MOSFET is a bipolar, current controlled, three terminal device

MOSFET is a unipolar, voltage controlled, three terminal device

MOSFET is a bipolar, current controlled, two terminal device

5.

MULTIPLE CHOICE QUESTION

30 sec • 5 pts

The arrow on the symbol of MOSFET indicates

that it is a N-channel MOSFET

the direction of electrons

the direction of conventional current flow

that it is a P-channel MOSFET

6.

MULTIPLE CHOICE QUESTION

30 sec • 5 pts

The depletion N-channel MOSFET

Can be operated as a JFET with zero gate voltage

Can be operated as an enhancement MOSFET by applying +ve bias to gate

Can be operated as an enhancement MOSFET by applying -ve bias to gate

Cannot be operated as an enhancement MOSFET

7.

MULTIPLE CHOICE QUESTION

30 sec • 5 pts

The enhancement N-channel MOSFET

Cannot be operated as an enhancement MOSFET

Can be operated as a JFET with zero gate voltage

Can be operated as an enhancement MOSFET by applying -ve bias to gate

Can be operated as an enhancement MOSFET by applying +ve bias to gate

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