Microwave Module 4 Subtopic 2 Part 2

In Microwave Transistors:

The primary differences between standard lower frequency transistors and microwave types are internal 1. _ and 2. _.

• 1. geometry

  2. packaging

• 1. circuit design

  2. receiver systems

• 1. transistors

  2. gain

• 1. attenuation

  2. receive signal level

In Microwave Transistors:

To reduce internal inductances and capacitances of transistor elements, special chip configurations known as ___ are used.

• geometries

• transistors

• integrated circuits

• circuits

In Microwave Transistors:

__ permit the transistor to operate at higher power levels and at the same time minimize distributed and stray inductances and capacitances.

• geometries

• transistors

• integrated circuits

• circuits

In Microwave Transistors:

The ___ , a type of JFET using a Schottky barrier junction, can operate at frequencies above 5 GHz.

• GaAs MESFET

• Silicon MOSFET

• MOSFET

• BJT

In Microwave Transistors:

The GaAs MESFET, a type of JFET using a Schottky barrier junction, can operate at frequencies above ___.

• 5 GHz

• 5 MHz

• 4 kHz

• 3 kHz

In Microwave Transistors:

A _ is a variant of the MESFET and extends the range beyond 20 GHz by adding an extra layer of semiconductor material such as AlGaAs.

• high electron mobility transistor (HEMT)

• low electron mobility transistor (LEMT)

• high electron mobility transmitter (HEMT)

• low electron mobility transistor (LEMT)

In Microwave Transistors:

A high electron mobility transistor (HEMT) is a variant of the MESFET and extends the range __ by adding an extra layer of semiconductor material such as AlGaAs.

• beyond 20 GHz

• below 20 GHz

• beyond 10 GHz

• below 10 GHz

In Microwave Transistors:

A high electron mobility transistor (HEMT) is a variant of the MESFET and extends the range beyond 20 GHz by adding an extra layer of semiconductor material such as _.

• AlGaAs

• GaAs

• AlAs

• AlJaMeS

In Microwave Transistors:

A popular device known as a __ is making even higherfrequency amplification possible in discrete form and in integrated circuits. It can operate up to 200 GHz.

• high electron mobility transistor (HEMT)

• low electron mobility transistor (LEMT)

• hetero-junction bipolar transistor (HBT)

• hetero-junction transistor (HJT)

In Microwave Transistors:

hetero-junction bipolar transistor (HBT) can operate up to __

• 200 GHz

• 200 MHz

• 100 kHz

• 300 GHz