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QUIZ-1

Authored by RAVI KUMAR SARIKI

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University

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QUIZ-1
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10 questions

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1.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Which IC technology consumes less Power

Bipolar

BiCMOS

CMOS

ECL

2.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Which IC technology has high input impedance?

Bipolar

BiCMOS

CMOS

ECL

3.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

PMOS devices are formed in

n-type substrate of moderate doping level

n-type substrate of low doping level

p-type substrate of high doping level

n-type substrate of high doping level

4.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Terminal contacts in MOS fabrication is formed using which procedure

Lithography

 Diffusion

Passivation

Metallization

5.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

During which processing step a glass like protective layer is formed around IC ?

Lithography

Passivation

Diffusion

Doping

6.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

During which one of the following conditions NMOS transistor is non saturation region

Vds = Vgs –Vt

Vgs <  Vt

Vds < Vgs –Vt

Vds > Vgs –Vt

7.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

In MOS transistors_______ is used for their gate

metal

silicon-dioxide

gallium

 polysilicon

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