Theoretical Nanophysics 9/2023

Theoretical Nanophysics 9/2023

University

10 Qs

quiz-placeholder

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Theoretical Nanophysics 9/2023

Theoretical Nanophysics 9/2023

Assessment

Quiz

Physics

University

Medium

Created by

Andras Palyi

Used 1+ times

FREE Resource

10 questions

Show all answers

1.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Media Image

Take the simpler model of the Single Electron Box, i.e., without the tunneling-induced quantum corrections. Reducing the temperature by a factor of 2 ...

does not change the capacitance peak height

doubles the capacitance peak height

halves the capacitance peak height

exponentially suppresses the capacitance peak height

2.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Media Image

Take the simpler model of the Single Electron Box, i.e., without the tunneling-induced quantum corrections. Reducing the temperature by a factor of 2 ...

does not change the capacitance peak width

doubles the capacitance peak width

halves the capacitance peak width

exponentially suppresses the capacitance peak width

3.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

1/Joule

1/(Joule*meter3)

meter3/Joule

1/Joule2

4.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Consider 't', the tunneling energy parameter in the tunnel-junction Hamiltonian. How does it change, if we double the volumes of both leads?

It does not change.

It is reduced by a factor of 2.

It is reduced by a factor of 4.

5.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Media Image

What is the first-order perturbed wave function of the state (1,0)T, if t is the perturbation in the Hamiltonian?

6.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Media Image

What is the second-order energy correction of the state (1,0)T, if t is the perturbation?

-t

7.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Take an SET in equilibrium (no bias voltage). Its `Coulomb staircase' is exhibited by which function?

conductance G as function of gate voltage Vg

capacitance C as function of gate voltage Vg

charge N as function of gate voltage Vg

charging energy Ec as function of gate voltage Vg

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