Chujowy egzamin 1

The series resistance of a semiconductor diode in room temperature depends on:

• the length of p and n materials

• temperature

• cross section area of the p and n n materials

• current Id flowing through it

• doping

  concentration of the p and n materials

what is the absolute value of the current flowing through the resistor R2, if Uin = -10V, R1 = 0,5kOhm, R2 = 3kOhm, Udz = 3V

• 2mA

• 0mA

• 3mA

• 0,7mA

• 1mA

after applying a constant voltage to a two terminal component made of a p - doped silicon:

• there will flow a drift current

• there will flow a diffusion current

• there will be no current

• there will flow both diffusion and drift currents

pytanie4 - brak odp

• a

• a

• a

A cubic 1 cm^3, made of intrinsic silicon, after introducing donor dopant

• will be negatively charged

• will have more electrons than holes

• will behave electrically indifferent

• will be positively charged

• I_R2 = 1 mA

• I_R2 = 3 mA

• I_R2 = 2 mA

• I_R2 = 0 mA

• I_R2 = 4 mA

In the following circuit E = 7V, R = 1kOhm and the forward bias diode voltage is 0,7V at the temp 20*C. By how much the current will change if the temperature increases to 50*C

• it will increase by 60μA

• it will decrease by 60μA

• it will decrease by 100μA

• it will increase by 100μA

• it will stay the same

pyt 8 - brak

• a

• a

9 - brak odp

• a

• a

• Active inverse

• active normal

• saturation

• can't be estimated

• cut - off

Answer explanation

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