diode 10 questions 1

Formation of P-type semiconductor

• Adding trivalent impurities to a pure semiconductor

  
  

• Doping with pentavalent impurities

  
  

• Movement of electrons

  
  

• Movement of holes

  
  

Diode biasing is determined by:

• The polarity of the voltage being used
• not the polarity of the voltage being used

• voltage being used

• polarity but not voltage

Effect of forward and reverse bias on a PN-junction diode:

• Forward bias reduces the depletion region and allows current flow; reverse bias increases the depletion region and prevents current flow.
• backwards but anode is better

• bias doesn't exist

• PN - junction diodes work

Condition for forward bias in a diode:

• Anode connected to positive terminal of battery.
• non of the above

• anode connected to negative terminal of the battery

• both

Forward-bias voltage comparison: germanium vs silicon diode.

• Silicon diode requires more voltage than germanium diode.
• Ruber diode doesn't need more voltage than germanium

• none of the above

• silicon diode requires more voltage than silicone diode

Current in N-type material is conducted by:

• Movement of electrons
• none of the above

• both

• movement of protons

Lead end of a diode nearest to the identification band.

• Cathode
• cathina

• cathia

• cathrode

Ways diodes are rated:

• Voltage rating, current rating, power dissipation
• power rating, voltage dissipation, current rating

• current dissipation, voltage rating, power rating

• none of the above

Process for N-type semiconductor formation

• Doping with pentavalent impurities
• doping without pentavalent impurities

• none of the above

• doping with pentavalent but without impurities

Silicon diode avalanche condition:

• Reverse voltage exceeds breakdown voltage.
• forwards voltage exceeds breakdown voltage

• none of the above

• both