MALVINO 2

The barrier potential across each silicon depletion layer is

• 0

• 0.3 V

• 0.7 V

• 1 V

The emitter diode is usually

• Forward-biased

• Reverse-biased

• Nonconducting

• Operating in the breakdown region

For normal operation of the transistor, the collector diode has to be

• Forward-biased

• Reverse-biased

• Nonconducting

• Operating in the breakdown region

The base of an npn transistor is thin and

• Heavily doped

• Lightly doped

• Metallic

• Doped by a pentavalent material

Most of the electrons in the base of an npn transistor flow

• Out of the base lead

• Into the collector

• Into the emitter

• Into the base supply

Most of the electrons in the base of an npn transistor do not recombine because they

• Have a long lifetime

• Have a negative charge

• Must flow a long way through the base

• Flow out of the base

Most of the electrons that flow through the base will

• Flow into the collector

• Flow out of the base lead

• Recombine with base holes

• Recombine with collector holes

The current gain of a transistor is the ratio of the

• Collector current to emitter current

• Collector current to base current

• Base current to collector current

• Emitter current to collector current

Increasing the collector supply voltage will increase

• Base current

• Collector current

• Emitter current

• None of the above

The fact that only a few holes are in the base region means the base is

• Lightly doped

• Heavily doped

• Undoped

• None of the above