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ECE316_Memories

Authored by Sameh Ibrahim

Engineering

University

Used 1+ times

ECE316_Memories
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5 questions

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1.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

The smallest ROM memory is

NAND ROM with implant programming

NAND ROM with Metal 1 programming

NOR ROM with active layer programming

NOR ROM with contact programming

2.

MULTIPLE SELECT QUESTION

45 sec • 1 pt

It is preferred to program the ROM using metal layers to

reduce time to market

reduce ROM area

increase speed

reduce cost

3.

MULTIPLE SELECT QUESTION

45 sec • 1 pt

Which of the following statements is (are) correct with respect to SRAM?

The higher the cell ratio the better

The lower the cell ratio the better

The higher the pull-up ratio the better

The lower the pull-up ratio the better

4.

MULTIPLE SELECT QUESTION

45 sec • 1 pt

Which of the following statements is (are) correct with respect to DRAM?

3T DRAMs require explicit capacitor

1T DRAMs require explicit capacitor

3T DRAMs read is destructive

1T DRAMs read is destructive

5.

MULTIPLE SELECT QUESTION

45 sec • 1 pt

Which of the following statements is (are) correct with respect to Column Decoders?

tree-based are slower

pass-transistor-based are slower

pass-transistor-based are larger in area

tree-based are larger in area

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