Semiconductors - MCQ Assessment

Which of the following is a property of intrinsic semiconductors?

• High conductivity

• Equal number of electrons and holes

• Doped with pentavalent atoms

• Conduct only at 0 K

The energy gap of silicon at room temperature is approximately:

• 0.1 eV

• 0.7 eV

• 1.1 eV

• 2.0 eV

In n-type semiconductors, the majority charge carriers are:

• Holes

• Electrons

• Protons

• Positrons

The process of adding impurities to a pure semiconductor is known as:

• Intrinsecization

• Doping

• Amplification

• Alloying

Which element is commonly used as a trivalent dopant in semiconductors?

• Phosphorus

• Arsenic

• Boron

• Antimony

The Fermi level in an intrinsic semiconductor lies:

• Near conduction band

• Near valence band

• At the middle of the energy gap

• Inside the conduction band

A p-n junction allows current to pass easily in:

• Both directions

• Reverse-biased condition

• Forward-biased condition

• None of the above

The width of the depletion region increases when:

• The diode is forward biased

• The diode is reverse biased

• The temperature increases

• None of the above

The drift current in a semiconductor is due to:

• Gradient in carrier concentration

• Movement of charge carriers under electric field

• Random thermal motion

• None of these

The mobility of electrons in a semiconductor is generally:

• Zero

• Less than hole mobility

• Greater than hole mobility

• Equal to hole mobility