23 Power Mosfet Transistors | Power Electronics

23 Power Mosfet Transistors | Power Electronics

Assessment

Interactive Video

Engineering, Physics, Science

University

Hard

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The video tutorial discusses MOSFET transistors, focusing on their characteristics, structure, and switching processes. It explains the differences between MOSFETs and BJTs, highlighting the voltage control and bidirectional current flow of MOSFETs. The internal structure, including parasitic components, is explored. The tutorial also covers the importance of gate drivers in managing the switching process and compares MOSFETs with IGBTs and BJTs, emphasizing their speed and current capabilities.

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10 questions

Show all answers

1.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

What is the primary control mechanism for MOSFETs?

Inductance

Resistance

Voltage

Current

2.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Why are N-channel MOSFETs more popular than P-channel MOSFETs?

Higher voltage rating

Lower on-resistance

Higher cost

Better thermal performance

3.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

What is a significant parasitic component found in MOSFETs?

Parasitic resistor

Parasitic capacitor

Parasitic diode

Parasitic inductor

4.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

What is the main issue caused by the parasitic diode in MOSFETs?

Long reverse recovery time

High forward voltage drop

Low current capacity

High thermal resistance

5.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Why is it important to use gate drivers with MOSFETs?

To increase the voltage rating

To reduce switching losses

To decrease the on-resistance

To improve thermal performance

6.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

What is the role of the Miller capacitance in MOSFET switching?

Increases the on-resistance

Improves thermal performance

Causes a plateau in the gate voltage

Reduces the switching speed

7.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Which material is used in advanced MOSFETs for higher voltage applications?

Gallium arsenide

Silicon carbide

Germanium

Silicon

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