Transistor Innovations and Future Developments

Transistor Innovations and Future Developments

Assessment

Interactive Video

Computers

9th - 10th Grade

Hard

Created by

Jennifer Brown

FREE Resource

5 questions

Show all answers

1.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

What was a major innovation that helped in increasing the surface area for electron flow in transistors?

Silicon Doping

Graphene Layers

Quantum Tunneling

FinFET

2.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

What is the key feature of the Gate All Around (GAA) design that differentiates it from FinFET?

Nano ribbons

Quantum computing

Larger fins

Use of graphene

3.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

How does the Gate All Around design improve the control of current flow?

By using larger transistors

By surrounding the nano ribbons on all sides

By increasing the number of fins

By using a different substrate material

4.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

What material is used in the Gate All Around design that makes it feasible for large-scale production?

Carbon nanotubes

Pure silicon

Silicon-germanium alloy

Graphene

5.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

When are Gate All Around transistors expected to become available in consumer electronics?

They are already available

In the next decade

In the next five years

Within the next year