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PRE-LAB- TRANSISTOR CHARACTERISTICS

Total questions: 25

Worksheet time: 8mins

Name
Class
Date
1.

A transistor has …………………

a)

one pn junction

b)

two pn junctions

c)

three pn junctions

d)

four pn junctions

2.

The number of depletion layers in a transistor is …………

a)

four

b)

two

c)

one

d)

three

3.

The base of a transistor is ………….. doped

a)

heavily

b)

moderately

c)

lightly

d)

none of the above

4.

The element that has the biggest size in a transistor is ………………..

a)

Emitter

b)

Collector-Base-Junction

c)

Base

d)

Collector

5.

In a NPN Transistor, the current carriers are ………….

a)

Acceptor Ions

b)

Donor Ions

c)

Free Electrons

d)

Holes

6.

The Collector of a Transistor is …………. doped

a)

Heavily

b)

Lightly

c)

Moderately

d)

None of the Above

7.

A transistor is a …………… operated device

a)

Voltage

b)

Both Voltage and Current

c)

Current

d)

None of the Above

8.

In a NPN Transistor, ……………. are the minority carriers

a)

Holes

b)

Free Electrons

c)

Donor Ions

d)

Acceptor Ions

9.

The Emitter of a Transistor is ………………… doped

a)

Lightly

b)

Moderately

c)

Heavily

d)

None of the Above

10.

At the Base-Emitter Junctions of a transistor, one finds ……………

a)

A Reverse Bias

b)

Low Resistance

c)

A Wide Depletion Layer

d)

None of the Above

11.

The Input Impedance of a Transistor is ………….

a)

High

b)

Very High

c)

Low

d)

Almost Zero

12.

Most of the majority carriers from the Emitter ………………..

a)

Pass through the Base Region to the Collector

b)

Recombine in the Base

c)

Recombine in the Emitter

d)

None of the Above

13.

In a Transistor ………………..

a)

IE = IC + IB

b)

IC = IE + IB

c)

IE = IC – IB

d)

IB = IC + IE

14.

The Output Impedance of a Transistor is ……………..

a)

Zero

b)

Low

c)

Very Low

d)

High

15.

In a Tansistor, IC = 100 mA and IE = 100.2 mA. The value of β is …………

a)

About 1

b)

50

c)

100

d)

200

16.

The value of β for a Transistor is generally ………………..

a)

1

b)

Less than 1

c)

Between 20 and 500

d)

Above 500

17.

The most commonly used transistor arrangement is ……………

a)

Common Emitter

b)

Common Base

c)

Common Collector

d)

None of the Above

18.

The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is ………………

a)

0o

b)

270o

c)

90o

d)

180o

19.

The voltage gain in a transistor connected in ………………. arrangement is the highest

a)

Common Emitter

b)

Common Base

c)

Common Collector

d)

None of the Above

20.

The arrow in the symbol of a transistor indicates the direction of ………….

a)

Electron Current in the Emitter

b)

Donor Ion Current

c)

Electron Current in the Collector

d)

Hole Current in the Emitter

21.

The most commonly used semiconductor in the manufacture of a transistor is ………….

a)

Germanium

b)

Silicon

c)

Carbon

d)

None of the Above

22.

The Collector-Base Junction in a transistor has ……………..

a)

Forward bias at all times

b)

Reverse bias at all times

c)

Low resistance

d)

None of the above

23.

In order to make N-type semiconductor which element and the corresponding group of the periodic table is used.....

a)

Nitrogen and Group- (III)

b)

Phosphorus and Group- (V)

c)

Boron and Group- (V)

d)

Phosphorus and Group- (III)

24.

In order to make P-type semiconductor which element and the corresponding group of the periodic table is used.....

a)

Boron and Group- (V)

b)

Boron and Group- (III)

c)

Phosphorus and Group- (V)

d)

Sodium and Group- (V)

25.

How much is the barrier voltage of a Silicon PN- Junction.....

a)

0.1

b)

0.5

c)

0.7

d)

0.3