WorksheetsPRE-LAB- TRANSISTOR CHARACTERISTICS
Total questions: 25
Worksheet time: 8mins
A transistor has …………………
one pn junction
two pn junctions
three pn junctions
four pn junctions
The number of depletion layers in a transistor is …………
four
two
one
three
The base of a transistor is ………….. doped
heavily
moderately
lightly
none of the above
The element that has the biggest size in a transistor is ………………..
Emitter
Collector-Base-Junction
Base
Collector
In a NPN Transistor, the current carriers are ………….
Acceptor Ions
Donor Ions
Free Electrons
Holes
The Collector of a Transistor is …………. doped
Heavily
Lightly
Moderately
None of the Above
A transistor is a …………… operated device
Voltage
Both Voltage and Current
Current
None of the Above
In a NPN Transistor, ……………. are the minority carriers
Holes
Free Electrons
Donor Ions
Acceptor Ions
The Emitter of a Transistor is ………………… doped
Lightly
Moderately
Heavily
None of the Above
At the Base-Emitter Junctions of a transistor, one finds ……………
A Reverse Bias
Low Resistance
A Wide Depletion Layer
None of the Above
The Input Impedance of a Transistor is ………….
High
Very High
Low
Almost Zero
Most of the majority carriers from the Emitter ………………..
Pass through the Base Region to the Collector
Recombine in the Base
Recombine in the Emitter
None of the Above
In a Transistor ………………..
IE = IC + IB
IC = IE + IB
IE = IC – IB
IB = IC + IE
The Output Impedance of a Transistor is ……………..
Zero
Low
Very Low
High
In a Tansistor, IC = 100 mA and IE = 100.2 mA. The value of β is …………
About 1
50
100
200
The value of β for a Transistor is generally ………………..
1
Less than 1
Between 20 and 500
Above 500
The most commonly used transistor arrangement is ……………
Common Emitter
Common Base
Common Collector
None of the Above
The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is ………………
0o
270o
90o
180o
The voltage gain in a transistor connected in ………………. arrangement is the highest
Common Emitter
Common Base
Common Collector
None of the Above
The arrow in the symbol of a transistor indicates the direction of ………….
Electron Current in the Emitter
Donor Ion Current
Electron Current in the Collector
Hole Current in the Emitter
The most commonly used semiconductor in the manufacture of a transistor is ………….
Germanium
Silicon
Carbon
None of the Above
The Collector-Base Junction in a transistor has ……………..
Forward bias at all times
Reverse bias at all times
Low resistance
None of the above
In order to make N-type semiconductor which element and the corresponding group of the periodic table is used.....
Nitrogen and Group- (III)
Phosphorus and Group- (V)
Boron and Group- (V)
Phosphorus and Group- (III)
In order to make P-type semiconductor which element and the corresponding group of the periodic table is used.....
Boron and Group- (V)
Boron and Group- (III)
Phosphorus and Group- (V)
Sodium and Group- (V)
How much is the barrier voltage of a Silicon PN- Junction.....
0.1
0.5
0.7
0.3
