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WorksheetsIntro to VLSI
Total questions: 30
Worksheet time: 5mins
Electronics are characterized by
low cost
low weight and volume
reliability
all of the mentioned
Speed power product is measured as the product of
gate switching delay and gate power dissipation
gate switching delay and gate power absorption
gate switching delay and net gate power
gate power dissipation and absorption
nMOS devices are formed in
p-type substrate of high doping level
n-type substrate of low doping level
p-type substrate of moderate doping level
n-type substrate of high doping level
Source and drain in nMOS device are isolated by
a single diode
two diodes
three diodes
four diodes
In depletion mode, source and drain are connected by
insulating channel
conducting channel
Vdd
Vss
The condition for non saturated region is
Vds = Vgs – Vt
Vgs lesser than Vt
Vds lesser than Vgs – Vt
Vds greater than Vgs – Vt
In enhancement mode, device is in _________ condition
conducting
non conducting
partially conducting
insulating
MOS transistor structure is
symmetrical
non symmetrical
semi symmetrical
pseudo symmetrical
The condition for linear region is
Vgs lesser than Vt
Vgs greater than Vt
Vds lesser than Vgs
Vds greater than Vgs
As source drain voltage increases, channel depth
increases
decreases
logarithmically increases
exponentially increses
MOS transistors consists of
semiconductor layer
metal layer
layer of silicon dioxide
all of the mentioned
In MOS transistors, _____ is used for their gate
metal
silicon dioxide
polysilicon
gallium
The gate region consists of
insulating layer
conducting layer
lower metal layer
p type layer
Electrical charge flows from
source to drain
drain to source
source to ground
source to gate
Source in NMOS transistors is doped with ______ material
n-type
p-type
n & p type
none of the mentioned
In N channel MOSFET which is the more negative of the elements?
source
gate
drain
source and drain
Enhancement mode device acts as ____ switch, depletion mode acts as _____ switch
open, closed
closed, open
open, open
close, close
Overheating in device occurs due to less number of resistors per unit area.
true
false
VLSI technology uses ________ to form integrated circuit
transistors
switches
diodes
buffers
Medium scale integration has
ten logic gates
fifty logic gates
hundred logic gates
thousands logic gates
______ architecture is used to design VLSI
system on a device
single open circuit
system on a chip
system on a circuit
The design flow of VLSI system is
1. architecture design 2. market requirement 3. logic design 4. HDL coding
2-1-3-4
4-1-3-2
3-2-1-4
1-2-3-4
Which provides higher integration density?
switch transistor logic
transistor buffer logic
transistor transistor logic
circuit level logic
Physical and electrical specification is given in
architectural design
logic design
system design
functional design
CMOS has
high noise margin
high packing density
high power dissipation
high complexity
In CMOS fabrication, nMOS and pMOS are integrated in same substrate.
true
false
P-well is created on
p subtrate
n substrate
p & n substrate
none of the mentioned
What are the advantages of BiCMOS?
higher gain
high frequency characteristics
better noise characteristics
all of the mentioned
In bipolar transistor, its quality can be improved by
increasing collector resistance
decreasing collector resistance
collector resistance does not affect the quality
decreasing gate resistance
Why I am taking the VLSI design elective course
Because this was the only course with vacancy
Because I want to pioneer Malaysia's own Silicon Valley
Because I foresee the bright future of VLSI and VLSI being the foundation of all tech related industry
Because Dr Sharifah is so pretty
