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Basic Electronics Engineering-2nd week

Total questions: 10

Worksheet time: 5mins

Name
Class
Date
1.

Which one is a 3 terminal device?

a)

Varactor diode

b)

LASER diode

c)

Transistor

d)

LED

2.

BJT is

a)

Bidirectional Junction Transistor

b)

Bipolar Junction Transistor

c)

Bidirectional Junction Transmitter

d)

Bipolar Junction Transmitter

3.

Which one is NPN transistor?

a)
b)
c)
d)
4.

To work as a Amplifier, the transistor has to be operated in

a)

Cut off region

b)

Saturation region

c)

Active region

d)

All of the above

5.

The insulating layer in MOSFET is

a)

SiO2

b)

Ge

c)

Si

d)

Mica

6.

Voltage controlled device is

a)

PN junction diode

b)

BJT

c)

FET

d)

Zener diode

7.

Current Controlled device is

a)

FET

b)

BJT

c)

MOSFET

d)

Diode

8.

In CB configuration, the value of α is

a)

ICIE\frac{I_C}{I_E}

b)

IEIB\frac{I_E}{I_B}

c)

IBIC\frac{I_B}{I_C}

d)

IEIC\frac{I_E}{I_C}

9.

FET is

a)

Function Emitter Transistor

b)

Field Emitter Transistor

c)

Function Effect Transistor

d)

Field Effect Transistor

10.

What is the effect of Enhancement and Depletion MOSFET ?

a)

Increase and Decrease of Majority Carriers

b)

Decrease and Increase of Majority Carriers

c)

Equal number of majority carriers

d)

Both will increase