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CHEMISTRY solid state

Total questions: 14

Worksheet time: 21mins

Name
Class
Date
1.

Which of the following is true about the charge acquired by P type semiconductor?

a)

positive

b)

negative

c)

neutral

d)

depends on concentration of p impurities

2.

to get a n-type semiconductor from silicon it should be dopped with a substance with valence

a)

2

b)

1

c)

3

d)

5

3.

the total number of tetrahedral voids in the face centred unit cell is

a)

6

b)

8

c)

10

d)

12

4.

which of the following point defects are shown by AgBr(s) Crystal

a)

A-Schottky defect

b)

B- Frankel defect

c)

C-metal excess defect

d)

C-metal deficiency defect

e)

A&B

5.

in which pair most efficient packing is present

a)

hcp and bcc

b)

hcp and ccp

c)

bcc and ccp

d)

bcc and simple cubic cell

6.

the percentage of empty space in a body-centered cubic arrangement is

a)

74

b)

68

c)

32

d)

26

7.

which of the following statement is not true about the hexagonal close packing

a)

the coordination number is 12

b)

it has 74% packing efficiency

c)

tetrahedral void of the second layer are covered by the share of the third layer

d)

in this arrangement spheres of the fourth layer are exactly aligned with those of the first layer

8.

in which of the following structures coordination number for cation and anion in the packed structure will be same

a)

Cl negative ions form fcc lattice and Na positive ions occupy all octahedral voids of the unit cell

b)

Ca2 positive from fcc lattice and F negative ions occupy all the 8 tetrahedral voids of the unit cell

c)

O2 negative ions from fcc lattice and Na positive ions occupy all the 8 tetrahedral volds of the unit cell

d)

S2 negative ions from fcc lattice and Zn two positive ions go into alternate tetrahedral was of the unit cell

9.

what is the coordination number in a square close packing structure in two dimensions

a)

2

b)

3

c)

4

d)

6

10.

which kind of defects are introduced by doping

a)

dislocation defect

b)

Schottkey defect

c)

frenkel defect

d)

electronic defect

11.

Silicon doped with electron rich impurity forms

a)

P type semiconductor

b)

n type semiconductor

c)

Intrinsic semiconductor

d)

Insulator

12.

which of the following statement is not true

a)

paramagnetic substance are weakly attracted by magnetic field

b)

ferromagnetic substances cannot be magnetized permanently

c)

the domains in antiferromagnetic substances are oppositely oriented with respect to each other

d)

pairing of electrons cancel their magnetic moment in the diamagnetic substances

13.

which of the following is not true about the ionic solids

a)

bigger and form the close packed structure

b)

smaller ions occupy either the tetrahedral or the octahedral voids depending upon their size

c)

occupation of all the voids is not necessary

d)

the fraction of octahedral or tetrahedral voids occupied depends upon the radii of the Ion occupy the voids

14.

a feromagnetic substances becomes a permanent magnet when it is placed in a magnetic field because

a)

all the domen's get oriented in the direction of magnetic field

b)

all domains get oriented in the direction opposite to the direction of magnetic field

c)

domain get oriented randomly

d)

domains are not affected by magnetic field