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WorksheetsSemiconductor
Total questions: 10
Worksheet time: 5mins
The process of adding an impurity to an intrinsic semiconductor is called
Doping
Ionization
Recombination
Atomic modification
A full-wave rectifier consist of _______________________________
1 Diode
2 Diode
3 Diode
4 Diode
The minority carriers in P-type silicon are called _________________
Neutron
Proton
Electron
Hole
Basic building blocks of all electronic circuits are
Devices in which there is a flow of electrons
devices in which there is no flow of electrons
devices in which there is a controlled flow of electrons
devices in which there is an uncontrolled flow of electrons
conductivity of semiconductor increases with increase in temperature, because
number density of free charge carriers increases
relaxation time increases
both number density of free charge carriers and relaxation time increases
number density of free charge carriers increases relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density
conductivity of semiconductor increases with increase in temperature, because
number density of free charge carriers increases
relaxation time increases
both number density of free charge carriers and relaxation time increases
number density of free charge carriers increases relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density
Let np and ne be the number density of holes and conduction electrons respectively in a semiconductor. Then,
np > ne in an intrinsic semiconductor, I < Ip + Ie
np = ne in an extrinsic semiconductor, I > Ip + Ie
np = ne in an intrinsic semiconductor, I = Ip + Ie
np > ne in an intrinsic semiconductor, I = 0( Here, Ip = current due to holes,Ie= current due to electrons, I= total current)
During formation of p-n junction
an electron diffuses from n to p side
a hole diffuses from p to n side
a hole diffuses from n to p side
an electron diffuses from p to n side
