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WorksheetsIndustrial Electronics Quiz - Diode & IGBT
Total questions: 10
Worksheet time: 8mins
Find the odd one
Schottky Diode
Zener Diode
General Purpose Diode
Fast Recovery Diode
IGBT full form?
Insulated Gate Bipolar Transistor
Isolated Gate Bipolar Transistor
Intrensic Gate Bipolar Transistor
Isolated Gate Bivalent Transistor
IGBT is made by combining
Transistor and Diode
MOSFET and Diode
Transistor and MOSFET
MOSFET and Transistor
Which are the terminals of IGBT
anode, cathode and gate
Emitter, Collector and Base
Emitter, Collector and Gate
Drain, Source and Gate
Comment on the figure
for a diode, trr will be less if forward current is less
trr is independent on the forward current
ta will be same for any value of forward current
ta and tb will be same always
An IGBT is also know as
MOIGT (Metal oxide insulated gate transistor)
COMFET (Conductively modulated FET)
GEMFET (Grain modulated FET)
All of the mentioned
IGBT possess
low input impedanc
high input impedance
high on-state resistance
second breakdown problems
The controlling parameter in IGBT is ______
Gate current
Gate Emitter Voltage
Load current
VCE
In IGBT, the n– layer above the p+ layer is called as
Drift layer
Injection layer
Body layer
Collector Layer
The major drawback of the first generation IGBT is
latch-up problems
noise & secondary breakdown problems
sluggish operation
latch-up & secondary breakdown problems
