WorksheetsPower Devices
Total questions: 8
Worksheet time: 3mins
The main cause of the second breakdown is
Existence of the drift layer
Low thickness of base
current crowding and negative temperature coefficient of resistivity
On state voltage drop across the MOSFET is
Greater than that across a BJT
Less than that across a BJT
equal to that across BJT
The body layer is connected to source terminal in a MOSFET in order to
Reduce the on state power dissipation
Increase the speed of operation
Avoid latch up in MOSFET
The operation of the MOSFET is basically dependent on
The principal of conductivity modulation
The principal of current multiplication
Principal of creation of inversion layer
An IGBT structure is obtained
By combining a MOSFET and BJT
By adding an insulated gate to the power transistor and by adding P+ layer
None of the above
The gate source voltage to the IGBT should be sufficiently large in order to
Avoid latch up in IGBT
To reduce the on state voltage drop
to reduce the turn off time
The nonpunch through IGBT has a
Symmetrical blocking capacity
Asymmetrical blocking capacity
No blocking capacity at all
identify
Body
drifft
buffer
