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WorksheetsElectronics Internal 1
Total questions: 25
Worksheet time: 12mins
The Ripple Factor of a FWBR is ...........
1.21
12.1
0.48
4.8
The number of depletion layer in a transistor is..........
1
2
3
0
The collector of a transistor is.........doped.
Moderately
Heavily
Lightly
Not doped
In a transistor the base current is about ........% of emitter current.
10
50
25
5
When transistors are used in digital circuits, they usually work in ............region
Cut off
Active
Saturation
All the above
Find
β for VCE=10v, Ic=4mA?150
200
250
50
In which state the transistor is said to be "ON" ?
A
B
C
None of these
In a CE transmitter amplifier, if the amplification factor is 150 and the collector voltage is 4 V and resistance is 2 kΩ, what should be the value of RB ( in K Ω ), given that the dc base current is 10 times the signal current?
5
10
15
20
From the output characteristics of a transistor, one cannot calculate __________
IB
VBE
VCE
Ic
In the output characteristics, the resistance is the __________of the curve
Slope
Trace
Asymptote
Reciprocal Of the Slope
In a transistor with normal biasing
Emitter junction has high and Collector junction has low resistance
Emitter junction has low and Collector junction has high resistance
Emitter junction and Collector junction have high resistance
Emitter junction and Collector junction have low resistance
The magnitude of the current ICBO depends largely on the
amount of doping
increase in temperature
increase in potential
None of these
The arrow head represents
Electron flow in the emitter region
Majority Carriers flow in the emitter region
Minority Carriers flow in the emitter region
Conventional Current flow in the emitter region
The CE amplifier are preferred over CB and CC because it has
High power gain
High current gain
High voltage gain
All the above
A transistor is said to be Quiescent , When
It is biased
It is unbiased
No signal is applied to it
It is ON
In CB configuration, the Output characteristics are drawn between
VCB Vs IC for constant IE
VCB Vs IE for constant IC
VCE Vs IC for Constant IB
VCE Vs IE for Constant IC
The minimum value of VCE required to reverse bias the CE junction in a silicon transistor is
0.3
0.5
1.0
0.7
The Q point of a transistor is selected at the midpoint of the active region because
It gives distortion less output
It gives better stability
It needs a small DC voltage
The biasing circuit needs a less no of resistances
Transistor works in the active region when
Emitter and collector junctions are reverse biased
Emitter and collector junctions are forward biased
Emitter junction is reverse and collector junction is forward biased
Emitter junction is forward and collector junction is reverse biased
The ideal value of stability factor is..........
0
0.5
1
∞
For a single stage amplifier with Rc=4K Ω , Ri= 2K Ω , and β =100, Find its Voltage gain?
100
1000
2000
200
A transistor employs a 4 kΩ load and VCC = 13V. What is the maximum input signal if β = 100 ? Given Vknee = 1V and a change of 1V in VBE causes a change of 5mA in collector current.
60mV
6mV
600mV
6000mV
For a BJT, the common – base current gain 𝛼 = 0.98 and the collector base junction reverse bias saturation current 𝐼𝐶0 = 0.6𝜇𝐴. This BJT is connected in the common emitter mode and operated in the active region with a base drive current 𝐼𝐵 = 20𝜇𝐴. The collector current 𝐼𝐶 for this mode of operation is
0.98mA
0.99mA
1.0mA
1.01mA
In a transistor having finite β
the forward biasing across the EB junction is kept constant and reverse biasing across CB junction is increased. Then the base current will..................
Decrease
Increase
remain constant
None of these
Which configured transistor is used for impedance matching
CE
CC
CB
All the above
