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Quiz 1

Total questions: 11

Worksheet time: 4mins

Name
Class
Date
1.

The separation between valence band and conduction band is measured in

a)

meter

b)

ev

c)

milimeter

d)

none

2.

Resistivity of copper has the unit

a)

ohm-meter

b)

ohm

c)

ohm-1 meter

d)

ohm meter-1

3.

A p-type germanium is obtained on doping intrinsic germanium by

a)

Phosphorus

b)

Aluminum

c)

Boron

d)

Gold

4.

A Zener diode can be used as

a)

rectifier

b)

transmitter

c)

voltage regulator

d)

oscillator

5.

Depletion region is formed in a p-n junction due to

a)

diffusion

b)

recombination

c)

ionization

d)

all of these

6.
a)

p-n diode

b)

transistor

c)

FET

d)

MOSFET

7.

A semiconductor has generally ……………… valence electrons.

a)

2

b)

3

c)

6

d)

4

8.

The forbiddenn energy gap for Germanium is of the order of

a)

(a) 0.7 eV

b)

(b) 0.3 eV

c)

(c) 1.1 eV

d)

(d) 10 eV

9.

Which of the following is a pentavalent impuity added while forming an extrinsic semiconductor ?

a)

Boron

b)

Arsenic

c)

Indium

d)

Gallium

10.

Doping of Semiconductors

a)

materials which can conduct electricity better than insulator, but not as well as conductors.

b)

The process of adding of a certain amount of specific impurities atoms in the pure semiconductor.

c)

when 4 electrons in outermost orbit.

11.

The process of adding an impurity to an intrinsic semiconductor is called

a)

Doping

b)

Ionization

c)

Recombination

d)

Atomic modification