wayground logo

Free Printable Worksheets

Font size

S
M
L
XL
Worksheets

Quiz 3

Total questions: 18

Worksheet time: 9mins

Name
Class
Date
1.
1. The resistivity of a semiconductor lies between 
a)
(a)10 -6 Ωm to10-8 Ωm
b)
n(b) 10Ωm to1014 Ωm
c)
(c) 10 -2 Ωm to10Ωm
d)
(d) none of these
2.
2. The forbiddenn energy gap for Germanium is of the order of
a)
(a) 0.7 eV
b)
(b) 0.3 eV
c)
(c) 1.1 eV
d)
(d) 10 eV
3.
3. Which of the following is a pentavalent impuity added while forming an extrinsic semiconductor ?
a)
(a) Boron 
b)
Arsenic
c)
Indium
d)
Gallium
4.

Doping of Semiconductors

a)

materials which can conduct electricity better than insulator, but not as well as conductors.

b)

The process of adding of a certain amount of specific impurities atoms in the pure semiconductor.

c)

when 4 electrons in outermost orbit.

5.

Which of the following statements is NOT the diode application in electronic circuit?

a)

Diode as voltage regulator

b)

Diode as Rectifier

c)

Diode as Amplifier

d)

Diode as solar cell

6.

A full-wave rectifier consist of _______________________________

a)

1 Diode

b)

2 Diode

c)

3 Diode

d)

4 Diode

7.

Basic building blocks of all electronic circuits are

a)

Devices in which there is a flow of electrons

b)

devices in which there is no flow of electrons

c)

devices in which there is a controlled flow of electrons

d)

devices in which there is an uncontrolled flow of electrons

8.

conductivity of semiconductor increases with increase in temperature, because

a)

number density of free charge carriers increases

b)

relaxation time increases

c)

both number density of free charge carriers and relaxation time increases

d)

number density of free charge carriers increases relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density

9.

Let np and ne be the number density of holes and conduction electrons respectively in a semiconductor. Then,

a)

np > ne in an intrinsic semiconductor, I < Ip + Ie

b)

np = ne in an extrinsic semiconductor, I > Ip + Ie

c)

np = ne in an intrinsic semiconductor, I = Ip + Ie

d)

np > ne in an intrinsic semiconductor, I = 0( Here, Ip = current due to holes,Ie= current due to electrons, I= total current)

10.

During formation of p-n junction

a)

an electron diffuses from n to p side

b)

a hole diffuses from p to n side

c)

a hole diffuses from n to p side

d)

an electron diffuses from p to n side

11.

A semiconductor has generally ……………… valence electrons.

a)

2

b)

3

c)

6

d)

4

12.

Which is not one of the properties of semiconductor?

a)

4 electrons in outermost orbit, in covalent bonding.

b)

atoms vibrate causes electron to break free from the bonds.

c)

Electron free leaves hole.

d)

Semiconductor has 2 types of charge carriers.

e)

all of the above are the properties of it

13.

Which among these is NOT a semiconductor

a)

Germanium

b)

Silicon

c)

Gallium Arsenide

d)

Titanium

14.

The forbidden energy gap for Silicon is of the order of

a)

0.7 eV

b)

0.3 eV

c)

1.1 eV

d)

10 eV

15.

With forward bias to a pn junction , the width of depletion layer ………

a)

Decreases

b)

Increases

c)

Remains the same

d)

None of the above

16.

In semiconductors like silicon, the unit cell is

a)

a simple cubic

b)

body centred cube

c)

face centred cube

d)

hexagonal

17.

Electronic distribution of an Si atom is

a)

2,10,2

b)

2,8,4

c)

2,7,5

d)

2,4,8

18.

There is no hole current in good conductors because they

a)

are full of electron gas

b)

have large forbidden energy gap

c)

have no valance band

d)

have overlapping valance and conduction bands