WorksheetsMCQ on DIODE
Total questions: 10
Worksheet time: 5mins
Q1: In the forward bias arrangements of a PN junction diodeQ1: In the forward bias arrangements of a PN junction diode
The N end is connected to the positive terminal of the battery
The P end is connected to the positive terminal of the battery
The direction of the current is from N end to the P end in the diode
The P end is connected to the negative terminal of the battery
Q2 In a PN junction diode
The current in the reverse biased condition is generally very small
The current in the reverse biased condition is generally very small but the forward-biased current is independent of the bias voltage
The reverse-biased current is strongly dependent on the applied bias voltage
The forward biased current is very small in comparison to reverse-biased current.
Q3 The cut-in voltage for silicon diode is approximately
0.2 V
0.6 V
1.1 V
1.4 V
Q4 The electrical resistance of the depletion layer is large because
It has no change carriers
It has a large number of charge carriers
It contains electrons as charge carriers
It has holes as charge carriers
If the forward voltage in a semiconductor diode is doubled, the width of the depletion layer will
Become
half
Become
one-fourth
Remain
unchanged
Become
double
The PN junction diode is used as
An
amplifier
A
rectifier
An
oscillator
A
modulator
When a PN junction diode is reverse biased
Electrons and holes are attracted towards each other and move towards the depletion region
Electrons and holes move away from the junction depletion region
Height of the potential barrier decreases
No change in the current takes place
A PN junction has a thickness of the order
1 cm
1 mm
10-6 m
10-12 cm
In the depletion region of an unbiased PN junction diode there are
Only electrons
Only holes
Both electrons and holes
Only fixed ions
On increasing the reverse bias to a large value in a PN junction diode, current
Increases slowly
Remains fixed
Suddenly increases
Decreases slowly
