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Total questions: 25
Worksheet time: 17mins
Which is the higher gain provided by a CE configuration?
current
resistance
power
The input/output relationship of the common-collector and common-base amplifiers is
180 degrees
90 degrees
0 degrees
For a CC configuration to operate properly, the collector-base junction should be reverse biased, while forward bias should be applied to …………… junction.
collector-emitter
base-emitter
collector-base
In a transistor, collector current is controlled by ………..
collector voltage
base current
collector resistance
Most of the electrons in the base of an NPN transistor flow …………
out of the base lead
into the collector
into the emitter
If a 2 mV signal produces a 2 V output, what is the voltage gain?
0.001
100
1000
Beta’s current ratio is ……..
IC/IB
IC/IE
IB/IE
A transistor may be used as a switching device or as a ………….
tuning device
rectifier
variable resistor
The C-B configuration is used to provide which type of gain?
voltage
current
resistance
A current ratio of IC/IE is usually less than one and is called …………
beta
alpha
theta
When transistors are used in digital circuits they usually operate in the ………….
active region
breakdown region
saturation and cutoff regions
The collector-base junction in a transistor has ……………..
forward bias at all times
reverse bias at all times
low resistance
A low input to the transistor gives __________
a) Low output
b) High Output
c) Normal Output
Which of the following is fastest switching devices?
BJT
MOSFET
JFET
The transistors provide good power amplification when they are used in
Common collector configuration
Common emitter configuration
Common base configuration
In a PNP transistor the base is the N-region. Its width relative to the P-region is
Smaller
Larger
Same
The transistors provide good power amplification when they are used in
Common collector configuration
Common emitter configuration
Common base configuration
The emitter-base junction of a transistor is ………. Biased while the collector-base junction is ………….
Reverse, Forward
Forward, forward
Forward, reverse
BJT is
a voltage control device
a current controlled device
a temperature controlled device
In a transistor an emitter base junction is always_________
(a) reversed biased
(b) grounded
(c) forward biased
A transistor can be used as____
(a) a half wave rectifier
(b) a full wave rectifier
(c) an amplifier
In a transistor, the thickness of the base region__________
(a) is equal to the thickness of the collector
(b) is equal to the thickness of the emitter
(c) Is very small as compared to the thickness of emitter and collect
Transistors are prepared from___________
insulators
intrinsic semiconductors
doped semiconductors
In an n-p-n transistor, the n region acts__________
only as a collector
only as a base
either as an emitter or a collector
When an n-p-n transistor is used as an amplifier__________
(a) holes move from emitter to base
(b) holes move from base to emitter
(c) electrons move from base to collector
