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Semiconductor-Diode

Total questions: 40

Worksheet time: 20mins

Name
Class
Date
1.
1. The resistivity of a semiconductor lies between 
a)

10 -6 Ωm to10-8 Ωm

b)

108 Ωm to1014 Ωm

c)

10 -2 Ωm to104 Ωm

d)

none of these

2.

2. The forbidden energy gap for Germanium is of the order of

a)

0.7 eV

b)

0.3 eV

c)

1.1 eV

d)

10 eV

3.
3. Which of the following is a pentavalent impuity added while forming an extrinsic semiconductor ?
a)

Boron 

b)
Arsenic
c)
Indium
d)
Gallium
4.
The reverse saturation current in a PN Junction diode is only due to 
a)
majority carriers
b)
minority carriers
c)
acceptor ions
d)
donor ions
5.

Doping of Semiconductors

a)

materials which can conduct electricity better than insulator, but not as well as conductors.

b)

The process of adding of a certain amount of specific impurities atoms in the pure semiconductor.

c)

when 4 electrons in outermost orbit.

6.

which statement is correct? (the dark circles represent the electrons)

a)

p-type of the diode is connected to the negative terminal.

b)

Electron moves across the p-n junction, makes the diode forward biased

c)

current will not flow in the circuit

d)

reverse biased circuit

7.

The process of adding an impurity to an intrinsic semiconductor is called

a)

Doping

b)

Ionization

c)

Recombination

d)

Atomic modification

8.

The characteristics of p-type semiconductors is includes

a)

Majority carriers are electron

b)

Has tendency to gain electron

c)

Has tendency to donor electron

d)

Easy to conduct electricity

9.

A full-wave rectifier consist of _______________________________

a)

1 Diode

b)

2 Diode

c)

3 Diode

d)

4 Diode

10.

Basic building blocks of all electronic circuits are

a)

Devices in which there is a flow of electrons

b)

devices in which there is no flow of electrons

c)

devices in which there is a controlled flow of electrons

d)

devices in which there is an uncontrolled flow of electrons

11.

Which of the following statements is NOT the diode application in electronic circuit?

a)

Diode as voltage regulator

b)

Diode as Rectifier

c)

Diode as Amplifier

d)

Diode as solar cell

12.

The minority carriers in P-type silicon are called _________________

a)

Neutron

b)

Proton

c)

Electron

d)

Hole

13.

conductivity of semiconductor increases with increase in temperature, because

a)

number density of free charge carriers increases

b)

relaxation time increases

c)

both number density of free charge carriers and relaxation time increases

d)

number density of free charge carriers increases relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density

14.

Let np and ne be the number density of holes and conduction electrons respectively in a semiconductor. Then,

a)

np > ne in an intrinsic semiconductor, I < Ip + Ie

b)

np = ne in an extrinsic semiconductor, I > Ip + Ie

c)

np = ne in an intrinsic semiconductor, I = Ip + Ie

d)

np > ne in an intrinsic semiconductor, I = 0( Here, Ip = current due to holes,Ie= current due to electrons, I= total current)

15.

During formation of p-n junction

a)

an electron diffuses from n to p side

b)

a hole diffuses from p to n side

c)

a hole diffuses from n to p side

d)

an electron diffuses from p to n side

16.
2. The forbiddenn energy gap for Germanium is of the order of
a)
(a) 0.7 eV
b)
(b) 0.3 eV
c)
(c) 1.1 eV
d)
(d) 10 eV
17.
The reverse saturation current in a PN Junction diode is only due to 
a)
majority carriers
b)
minority carriers
c)
acceptor ions
d)
donor ions
18.

The process of adding an impurity to an intrinsic semiconductor is called

a)

Doping

b)

Ionization

c)

Recombination

d)

Atomic modification

19.

A full-wave rectifier consist of _______________________________

a)

1 Diode

b)

2 Diode

c)

3 Diode

d)

4 Diode

20.

Basic building blocks of all electronic circuits are

a)

Devices in which there is a flow of electrons

b)

devices in which there is no flow of electrons

c)

devices in which there is a controlled flow of electrons

d)

devices in which there is an uncontrolled flow of electrons

21.

The minority carriers in P-type silicon are called _________________

a)

Neutron

b)

Proton

c)

Electron

d)

Hole

22.

conductivity of semiconductor increases with increase in temperature, because

a)

number density of free charge carriers increases

b)

relaxation time increases

c)

both number density of free charge carriers and relaxation time increases

d)

number density of free charge carriers increases, relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density

23.

Let np and ne be the number density of holes and conduction electrons respectively in a semiconductor. Then,

a)

np > ne in an intrinsic semiconductor, I < Ip + Ie

b)

np = ne in an extrinsic semiconductor, I > Ip + Ie

c)

np = ne in an intrinsic semiconductor, I = Ip + Ie

d)

np > ne in an intrinsic semiconductor, I = 0( Here, Ip = current due to holes,Ie= current due to electrons, I= total current)

24.

During formation of p-n junction

a)

an electron diffuses from n to p side

b)

a hole diffuses from p to n side

c)

a hole diffuses from n to p side

d)

an electron diffuses from p to n side

25.

conductivity of semiconductor increases with increase in temperature, because

a)

number density of free charge carriers increases

b)

relaxation time increases

c)

both number density of free charge carriers and relaxation time increases

d)

number density of free charge carriers increases relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density

26.

This is a graph that is seen on CRO. How is it change after full wave rectification process?

a)
b)
c)
d)
27.

What is the most common semiconductor material used for producing integrated circuits

a)

Quartz

b)

Silicon

c)

Diamond

d)

Tantalum

28.

Component that Convert AC to DC and allow current to flow in one Direction

a)

Capacitor

b)

Diode

c)

Inverter

d)

Resistor

29.
Name this electronic component
a)
Capacitor
b)
Fixed Resistor
c)
Potentiometer
d)
Transistor
30.

LED is

a)

Light Enhancing Diode

b)

Light Emitting Diode

c)

Light Emitting Detector

d)

Light Enhancing Detector

31.

Which of the following is a symbol of NPN transistor ?

a)
b)
c)
d)
32.

Conductivity of semiconductor __________________ with increase in temperature.

a)

increases

b)

decreases

c)

remains unchanged

33.

Who contribute to the current in a semiconductor

a)

electrons only

b)

holes only

c)

negative ions

d)

both electrons and holes

34.

The energy band in which free electrons exist is know as

a)

first band

b)

second band

c)

conductive band

d)

valence band

35.

The reverse saturation current in a PN Junction diode is only due to _________________.

a)

minority carriers

b)

majority carries

c)

negative ions

d)

positive ions

36.

Let np and ne be the number density of holes and electrons respectively in a pure semiconductor. Then,

a)

np < ne

b)

np= ne

c)

np > ne

d)

none of above

37.

A transistor is said to be in active region, when

a)

BE junction forward biased and BC junction reversed biased

b)

BE junction forward biased and BC junction forward biased

c)

BE junction reverse biased and BC junction reversed biased

d)

none of above

38.

What is the name of this component?

a)

PN junction

b)

LED

c)

silicon

d)

PNP

39.

The forbidden energy gap for Silicon is of the order of

a)

0.7 eV

b)

0.3 eV

c)

1.1 eV

d)

10 eV

40.

Which of the following acts as a donor impurity in doping process ?

a)

Arsenic

b)

Indium

c)

Gallium

d)

Boron