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WorksheetsQuiz Chapter BJT
Total questions: 10
Worksheet time: 8mins
Bipolar junction transistor consist of three terminals which are:
Emitter, source, base
Gate, emitter, collector
Emitter, base, collector
Emitter, p-side and n-side
In an NPN transistor, the N regions are
emitter and base
emitter and collector
base and collector
both collectors
Biasing mode where E-B junction is forward bias and C-B junction is reverse bias is known as?
Inverted
Active
Saturation
Cutoff
Which terminal is doped degenerately?
Collector
Emitter
Base
Gate
What is the common base current gain, and what range is the value of the gain?
alpha, in range hundreds
beta, in range hundreds
alpha, in range 0.99
beta, in range 0.99
Why is the base made thin compared to emitter and collector?
to maximize the injection efficiency
to minimize the collection efficiency
to maximize the breakdown voltage
to minimize the base transport efficiency
What is the reason for Emitters to be highly doped?
to increase the emitter injection
efficiency: the ratio of carriers injected by the emitter to those
injected by the base.
to increase the base injection
efficiency: the ratio of carriers injected by the base to those
injected by the emitter.
to increase the collector injection
efficiency: the ratio of carriers injected by the collector to those
injected by the base.
to increase the collector
efficiency: the ratio of carriers injected by the collector to those
injected by the emitter.
The region of a BJT that is lightly doped and very thin compared to other two regions
emitter
collector
none
base
The early effect in a BJT is caused by ………….
fast turn-on
large emitter-base forward bias
fast turn-off
large collector-base reverse bias
When the reverse bias voltage at C-B junction is too high, the width of base will decrease and causes:
punch through effect
cut-off effect
large signal effect
decrease in output
