WorksheetsSilicon Carbide Quiz
Total questions: 20
Worksheet time: 10mins
What is ratio of Si to C atom?
1 to 4
4 to 1
1/2 to 1
1/2 to 1/2
Which atom is bigger?
Si
C
Si and C are the same size
C is 10 times smaller then Si
How many covalent bonds are fomed in SiC structure?
1
2
3
4
Below is not a property of SiC ....
a wide band gap material
strong oxidation resistance
high saturation drift velocity
harder then diamond
What is 3C-SiC polytype structure?
It is a Si with 4 atom C
It is a SiC with 3C atom that covalently bonded
It has Cubic oreintation
It is a two layer structure of 3C and SiC that has one of the best electrical performance as compred to the rest
Rhombohedral is one of the
SiC crystal orientation
yes
no
yes and no, because SiC has more then 200 crystal orientations
Only if It has 5 layers of C-Si-C
What is the meaning of "6" in SiC polytype 6H-SiC?
6 Hidrogen atom
6 layers of C-Si-C
6 Helium atom
6 homogenous structures of Si-C
Which statement is not true?
Diamond has 5 times more then
Si in terms of Bandgap energy at 300K in eV
SiC has more then twice Saturated electron drift velocity as compared to Si
Si has better electron mobility as compared to SiC
SiC has better thermal conductivity as compared to Diamond
What is the meaning of Stoichiometry in SiC atomic structure?
1 to 4 atomic structure
1 to 3 atomic structure
4 to 1 atomic structure
1/2 to 1/2 atomic structure
What is the maximum junction temperature limits for most of the Si device?
160oC
260oC
300oC
100oC
Why SiC can switch faster then Si at high frequency?
because SiC has a lighter molecule weight as compared to Si
because the electron mobility is SiC is faster as compared to Si
because the thermal conductivity of SiC is 2.5 times much better then Si
because the drift velocity of SiC is more then twice as compared to Si
which one here is a unipolar device?
an IGBT
A pn transistor
A diode
SiC Mosfet
All of these statements are true except ....
SiC is one of the hardest materials on earth with hardness measurements of 10 Mohs scale
The covalent bonding between Si and C contributed to the hardness property of SiC
SiC is hard because it is composed of a tetrahedral atomic structure
Even though SiC is hard, diamond is still harder then SiC
Which material here cud be used to produce a p-type SiC?
Nitrogen
Boron
Phosporus
Arsenic
I can use this material to produce n-type SiC ......
Boron
Nitrogen
Aluminium
Gallium
What is the melting point of SiC?
1750oC
3480oC
2730oC
4250oC
One of this solution can dissolve SiC ....
water
NaOH
Sulphuric acid
vinegar
Below are the reasons why SiC is perfect for high power device except ...
thermal stability lower then WBG
the max junction temperature for Si is limited at 160oC only
lower breakdown voltage as compared to WBG devices
SiC requires higher temperature in Fab processing as compared to Si
Below are true statements aboud SiC Mosfet as compared to Mosfet except ...
Device structure are the same with Mosfet
Fab process steps are the same
They both have the same parameters and definition
They use the same base material in their fab process
In semiconductor, forbidden energy gap between valence band and conduction band is nearly ....
1 eV
2 eV
2.5 eV
3 eV
