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WorksheetsPE Unit 1
Total questions: 15
Worksheet time: 8mins
Power diode is
a three terminal semiconductor device
a two terminal semiconductor device
a four terminal semiconductor device
a three terminal analog device
The V-I Characteristics of the diode lie in the
1st & 2nd quadrant
1st & 4th quadrant
1st & 3rd quadrant
Only in the 1st quadrant
Choose the false statement
SCR is a bidirectional device
SCR is a controlled device
In SCR the gate is the controlling terminal
SCR are used for high-power applications
Among the following, the most suitable method to turn on the SCR device is the
Gate triggering method
dv/dt triggering method
Forward voltage triggering method
Temperature triggering method
The forward break over voltage is maximum when
Gate current = ∞
Gate current = -∞
It is independent of gate current
Gate current = 0
Higher the magnitude of the gate pulse
Lesser is the time required to inject the charges
Greater is the time required to inject the charges
Greater is the value of anode current
Lesser is the value of anode current
Choose the correct statement
MOSFET is a uncontrolled device
MOSFET is a voltage controlled device
MOSFET is a current controlled device
MOSFET is a temperature controlled device
The controlling parameter in MOSFET is
Vds
Ig
Vgs
Is
At turn-on the initial delay or turn on delay is the time required for the
Input inductance to charge to the threshold value
Input inductance to discharge to the threshold value
Input capacitance to discharge to the threshold value
Input capacitance to charge to the threshold value
In an IGBT, during the turn-on time
Vge decreases
Ic decreases
Vce decreases
none of the mentioned
An IGBT is also know as
MOIGT (Metal oxide insulated gate transistor)
COMFET (Conductively modulated FET)
GEMFET (Grain modulated FET)
All of the mentioned
The semiconductor device used in bidirectional application
GTO
SCR
MOSFET
TRIAC
Identify the symbol of semiconductor device
GTO
SCR
TRIAC
IGBT
Snubber circuit is used for
Temperature protection
Overvoltage protection
Overcurrent protection
Both overvoltage and overcurrent protection
IGBT can be used for
20 to 50 kHz
Less than 10 kHz
More than 50 kHz
50 to 100 kHz
