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WorksheetsMID-I
Total questions: 25
Worksheet time: 13mins
The probability density is the
Square root of wave function
Absolute value of wave function
Inverse of wave function
Absolute square of wave function
Davisson and Gremer experiment relates to
Interference
Electron Diffraction
Polarization
Phospherence
The minimum energy required for photoelectron to escape from metal plate in a photocell is called
Work function
Threshold frequency
Stopping voltage
Plancks constant
Compton shift depends on
Incident radiation
Nature of scattering substance
Angle of scattering
Amplitude of frequency
Light exhibits
Particle nature
Wave nature
Particle and wave nature
Monochromatic
In compton effect there is no scattering if
scattering angle is 90 degrees
recoiling angle is 90 degrees
Scattered angle is 0 degrees
scattered angle is 90 degrees
Germanium is
Pure Semiconductor
Impure semiconductor
Intrinsic semiconductor
a & b are true
Semiconducting materials are
conductors at low temperatures
insulators at high temperature
Conductors at high temperatures
Insulators at room temperature
Valency of an acceptor impurity is
4
3
5
3 or 5
Fermi level in ntype semiconductor lies
closer to conduction band
middle of energy gap
closer to valence band
between conduction and valence band
The Hall-effect helps to
Determine the mobility of charge carriers
Identify the sign of charge Carriers in the given material
Both a and b
Neither a nor b
Drift current in a semiconductor is
Idrift=eE(nμn+pμp)
Idrift=eEA(μn+μp)
Idrift=EA(neμn+pμp)
Idrift=eEA(nμn+pμp)
Emitter current is
Sum of collector and base current
Due to flow of electrons
Due to positive charge carriers
Due to electrons and holes
Transistor
Amplifies the signal
Triggers the signal
Compress the signal
Two terminal device
In forward biasing of p-n diode which of the following is True
Eliminates the potential barrier width
P-n Junction offers high resistance
No current flows in the circuit
Voltage is inversely proportional to current
Hall coefficient is
1/ne
Jn/e
J/e
J/ne
Which of the below is false in NPN transistor
Collector base is forward biased
Current flows out of the emitter
Majority carriers are electrons
Emitter base is forward biased
Debroglie wavelength associated with an electron accelerated by a potential of 100 V is
1.226 A
1.66 A
1.226 * 10-8 m
1.66 * 10-10cm
Potential at which current falls to zero is called
Photocurrent
Stopping potential
Threshold potential
photoelectric current
Velocity of matter waves is
C/V
C2/V
2C/V
C/2V
At 0K the Fermi energy level in n-type semiconductor lies
EF= (Ec+Ev)/2
EF= (Ec+Ed)/2
EF= (Ea+Ev)/2
EF= (Ea+Ed)/2
Energy gap in germanium is
0.79N
0.33eV
0.67eV
1.14 N
Minority carriers electrons are in
Semiconductor
Intrinsic Semiconductor
P-type
N-type
In PNP transistor the conductivity is due to
Flow of electrons
Neither electrons nor holes
Both electrons and holes
Concentration of holes
Relation between relativitic energy and momentum is
E=P/2m
E=P2/2m
E=P2m/2
E=P2/m
