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ESS553 Midterm Review

Total questions: 10

Worksheet time: 5mins

Name
Class
Date
1.

For the given initial and boundary conditions, which method should you use to calculate the concentration profile?

a)

Thin-Film Solution

b)

Error Function Solution

c)

Fourier Series Solution

d)

Laplace Transform Method

2.

For a Cu-Sn diffusion couple, which side will you expect to see the Kirkendall voids? (Tm,Cu = 1085oC, Tm,Sn = 232oC)

a)

Cu-rich side

b)

Sn-rich side

c)

Both sides

d)

The dark side

3.

Under which of the following conditions will high diffusivity paths (快速擴散路徑) dominate the diffusion process?

a)

Low defect density (低缺陷密度)

b)

High temperature (高溫)

c)

Low temperature (低溫)

d)

Short diffusion time (短時間)

4.

From the atomic model of diffusion and random walk theory, the root-mean-squared displacement of an atom in 3D is?

a)

2Dt\sqrt[]{2Dt}  

b)

4Dt\sqrt[]{4Dt}  

c)

6Dt\sqrt[]{6Dt}  

d)

8Dt\sqrt[]{8Dt}  

5.

If a material process operates through serial (串聯) reactions, which reaction will dominate the reaction rate?

a)

The slowest (最慢) reaction

b)

The fastest (最快) reaction

c)

The coolest (最酷) reaction

d)

The hottest (最辣) reaction

6.

When calculating interdiffusivity, the diffusivity of the element with a lower concentration will contribute more to the calculated value.

a)

True

b)

False

7.

Given the melting temperature (熔點) below, which element, at the same temperature, should have the slowest (最慢) self-diffusion rate?

a)

Cu (1083oC)

b)

Ag (961oC)

c)

Al (660oC)

d)

Ni (1455oC)

8.

For a drive-in doping process (thin-film solution), under what condition will the solution error be less than 0.1%?

a)

L>4.6 DtL>4.6\ \sqrt[]{Dt}  

b)

L<4.6 DtL<4.6\ \sqrt[]{Dt}  

c)

L=4.6 DtL=4.6\ \sqrt[]{Dt}  

d)

L<3.7 DtL<3.7\ \sqrt[]{Dt}  

9.

If two elements do not like to mix with each other, how is the thermodynamic factor compared to 1?

a)

Higher than 1

b)

Lower than 1

c)

Equal to 1

d)

Faster than 1

10.

Which process should result in the shown carbon (C) concentration profile?

a)

Carburization (滲碳)

b)

Decarburization (脫碳)

c)

Carbon deposition (積碳)