Free Printable MSA Quiz 3

1.

The intrinsic concentration of charge carrier in a semiconductor varies as

a)

$T$

b)

$T^2$

c)

$T^{\frac{3}{2}}$

d)

$\frac{1}{T}$

2.

The dependence of mobility of charge carriers in a semiconductor is given by

a)

$\mu\propto\frac{1}{T}$

b)

$\mu\propto\frac{1}{T^{\frac{3}{2}}}$

c)

$\mu\propto T^{\frac{3}{2}}$

d)

$\mu\propto T^2$

3.

The slope of the straight line drawn between $\ln\ \rho\ and\ \frac{1}{T}$ of a semiconductor gives

a)

$\frac{E_g}{k_B}$

b)

$\frac{E_g}{2k_B}$

c)

$E_gk_B$

d)

$2k_B$

4.

The electronic configuration of silicon is

a)

$1s^2,\ 2s^2,\ 2p^6,\ 3s^2,\ 3p^4$

b)

$1s^2,\ 2s^2,\ 2p^6,\ 3s^1,\ 3p^6$

c)

$1s^2,\ 2s^2,\ 2p^6,\ 3s^2,\ 3p^2$

d)

$1s^2,\ 2s^2,\ 2p^6,\ 3s^0,\ 3p^2$

5.

If $m_p^{\cdot}>m_n^{\cdot}$ , the position of the Fermi level in an intrinsic semiconductor

a)

lies midway between the valence band and conduction band and independent of temperature

b)

will be raised slightly with an increase in temperature

c)

will be lowered slightly with an increase in temperature

6.

The Fermi level in an n-type semiconductor at 0 K lies

a)

below the doner level

b)

halfway between the conduction band and the doner level

c)

coincides with intrinsic Fermi level

7.

When boron atoms are added to pure silicon, one gets

a)

p-type semiconductor

b)

n-type semiconductor

8.

In a p-type semiconductor, the density of acceptor atoms $N_a$ is increased, the Fermi level shifts towards the valance band.

a)

True

b)

False

9.

In an n-type semiconductor, the density of donor atoms $N_d$ is increased, the Fermi level shifts towards the conduction band.

a)

True

b)

False

10.

Room temperature resistivity of pure germanium in $\Omega-m$ is

a)

47

b)

4.7

c)

0.47

d)

0.047

11.

When a free electron recombines with a hole, there results

a)

generation of energy

b)

release of energy

c)

no change of energy

12.

The density of carriers in a pure semiconductor is proportional to

a)

$e^{-\frac{E_g}{k_BT}}$

b)

$e^{-\frac{2E_g}{k_BT}}$

c)

$e^{-\frac{E_g}{k_BT^2}}$

d)

$e^{-\frac{E_g}{2k_BT}}$

13.

The energy needed to detach the fifth valence electron from the arsenic impurity atoms surrounded by germanium atoms is approximately

a)

$0.001\ eV$

b)

$0.01\ eV$

c)

$0.1\ eV$

d)

$1.0\ eV$

14.

Donor-type impurity is formed by adding impurity of valency

a)

3

b)

4

c)

5

d)

6

15.

The diffusion current is proportional to

a)

square of the applied electric field

b)

applied electric field

c)

the concentration gradient of charge carriers

16.

The ratio of the diffusion constant for the hole $\left(D_p\right)$ to the mobility of the hole is proportional to

a)

$T$

b)

$T^2$

c)

$\frac{1}{T}$

d)

Independent of temperature (T)

17.

The depletion region in an open circuit p-n junction contains

a)

electrons

b)

holes

c)

uncovered immobile impurity ions

d)

neutralized impurity atoms

18.

The reverse saturation current in silicon diode is of the order of

a)

$1\ nA$

b)

$1\ \mu A$

c)

$1\ mA$

d)

$1\ A$

19.

In a reverse-biased p-n junction diode, the density of minority carrier holes in the n-region at the junction equals to

a)

thermal equilibrium concentration, $p_n^o$

b)

zero

c)

$\frac{p_n^o}{2}$

20.

The Einstein relationship between the diffusion constant D and mobility $\mu$ for electron is

a)

$\frac{D_n}{\mu_n}=\frac{2k_BT}{e}$

b)

$\frac{D_n}{\mu_n}=\frac{e}{k_BT}$

c)

$\frac{D_n}{\mu_n}=\frac{k_BT}{e}$

d)

$\frac{D_n}{\mu_n}=k_BT-E$

MSA Quiz 3

Total questions: 20

Worksheet time: 10mins

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