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WorksheetsDVD (18EC54) 2022-23
Total questions: 25
Worksheet time: 13mins
_______ is the photoresist which is initially soluble and becomes insoluble when exposed to UV light
Positive photo resist
Negative photo resist
chrome
reticle
In fabrication ___________is the process of building wires to connect the devices.
Sputtering
Routing
Passivation
Metallization
Which factor/s play/s a crucial role in determining the speed of CMOS logic gate?
All of the above
Load capacitance
Supply voltage
Gain factor of MOS
For a static CMOS, the output is high, then the state of the NMOS and PMOS are as follows
NMOS off and PMOS linear
NMOS off and PMOS non-linear
NMOS on and PMOS non-linear
NMOS on and PMOS linear
In high noise margin (NMH), the difference in magnitude between the maximum HIGH output voltage of driving gate and the maximum HIGH voltage is recognized by the _________gate.
Driven
Receiving
Both a and b
None of the above
In CMOS circuits, which type of power dissipation occurs due to switching of transient current and charging & discharging of load capacitance?
Dynamic dissipation
Static dissipation
Static and Dynamic dissipation
None
In stick diagram, n and p transistors are separated by using ____________
Diffusion
Demarcation line
N well
PR boundary
In CMOS inverter, the propagation delay of a gate is the/an _________ transition delay time for the signal during propagation from input to output especially when the signal changes its value.
Highest
Average
Lowest
None
The static PD for CMOS logic is maximum when input is at
VDD
VDD/2
VDD/4
2VDD
------------------- can pass a logic 1 perfectly, but cannot pass a logic 0 perfectly
Transmission gate
nMOS
pMOS
Keepers
To ensure both read stability and writeability in SRAM; The nMOS pull down transistor must be sized _______ as compared to access transistors and pMOS transistor must be sized_______.
Stronger ; Weaker
Weaker; Stronger
Greater; smaller
Smaller; Greater
For a 1T DRAM the voltage swing on the bitline during read out is ____
No Leakage
Leakage
one
zero
Consider a memory is designed to store 512-bytes of data in a four-way fold. The number of address lines feed to a row decoder =_________ and column decoder =________ to access 8-bit data at a time.
6;2
7;3
7; 2
6;3
If a designer wants to make nMOS 5X stronger than pMOS, then what sizes the designer end up having for Pseudo-nMOS inverter logic? Assume that the unit size inverter has .
PMOS: 2/4 and NMOS: 7/4
PMOS: 2/4 and NMOS: 6/4
PMOS: 3/4 and NMOS: 5/4
PMOS: 2/4 and NMOS: 5/4
The setup time is defined w.r.t positive edge of clock for _____ level Latch and for _____ edge-triggered flip-flop
- ; +
+ ; -
--; ++
++; --
To realize a negative-edge triggered flip-flop the master is built using _____ latch and the slave is built using _______ latch.
-- ;++
++; --
+ ; -
- ;+
Determine the logic contamination delay in each clock cycle for 2 phase transparent latch with 10ps of non-overlapping between phases. Assume that the system is a causal system. The value of logic contamination delay is _______ps.
Given Clock skew 0ps; clock period 500ps;hold time 60ps; setup time 25ps; tCDQ 40ps; tCCQ 35ps; non-overlap 50ps
16
14
17
15
A 5 input NOR gate has a logical effort of _____ and parasitic delay of
______. Assume that the unit size inverter has 2/1
11/3 ; 14/3
11/3 ; 16/3
12/3 ; 15/3
11/3 ; 15/3
In a Hi-Skewed inverter, the value of βp is ________ βn.
Lesser
Equal
Greater
none
Which mask is used for creating a body terminal of nMOS?
nWell
p+ diffusion
n+ diffusion
none
Which among the sequential elements have postponded output.
Latch
Master slave latch
Flip-flop
none
Depletion MOSFET
Enhancement MOSFET
Depletion MOSFET and Enhancement MOSFET
None of the above
constant electric scaling
constant voltage scaling
constant current model
constant electric and voltage scaling
Flash
EPROM
EEPROM
All of above
When both nMOS and pMOS transistors of CMOS logic design are in OFF condition, the output is:
1 or Vdd or HIGH state
0 or ground or LOW state
High impedance or floating(Z)
None of the mentioned
