wayground logo

Free Printable Worksheets

Font size

S
M
L
XL
Worksheets

Assesment:One-Week ATAL FDP On “Recent Advancements in VLSI

Total questions: 25

Worksheet time: 38mins

Name
Class
Date
1.
  1. 1.      In IC fabrication process, at what temperature soft bake process is performed and select its purpose

a)

300C to 600C and to apply extra photoresist

b)

900C to 1000C and to remove the residual solvents of the photoresist

c)

1800C to 2000C and to perform lithography

d)

1200C to 1600C and to perform annealing

2.
  1. 2. Select appropriate dynamic power expression.

a)

a.       PD = CL VDD2 fclk

b)

a.       PD = RL VDD fclk

c)

a.       PD = CL VDD2 fclk2

d)

a.       PD = RL VDD2 fclk

3.
  1. 3. Issue arises out of Clock Domain Crossing (CDC) check

a)

Data Loss

b)

Glitches

c)

Both a&b

d)

LVS error

4.
  1. 4.Power dissipation is directly related to.

a)

Frequency of operation

b)

Square of VDD

c)

Both a & b

d)

Amplitude of input signal

5.
  1. 5.Dynamic power in VLSI circuits depends on the following parameters

a)

Supply voltage

b)

Bit transition

c)

Time to market

d)

Both a & b

6.

6.Static power dissipation can be optimized by employing

a)

Capacitance compensation technique

b)

Clock gating technique

c)

Pipelining technique

d)

Parallel architecture technique

7.
  1. 7.Main parameter to be considered for reduction of power dissipation

a)

Static power dissipation

b)

Dynamic power dissipation

c)

Leakage power dissipation

d)

Both b & c

8.

8.Select proper sequence for RTL design

a)

Micro Architecture, Specifications, RTL design, Synthesis, Functional simulation, Timing verification, Device programming

b)

Specifications, Micro Architecture, RTL design, Functional simulation, Synthesis, Timing Verification, Device programming

c)

RTL design, Specifications, Micro Architecture, synthesis, timing verification, Device programming, Functional simulation

d)

Functional simulation, Specifications, Micro Architecture, RTL design, Synthesis, Timing Verification, Device programming

9.

9.Digital system design can be done using the following minimum number of logic blocks

a)

Encoders & Decoders

b)

Multiplexers & demultiplexers

c)

Multiplexers & D-Flip Flops

d)

Demultiplexers & T-Flip flops

10.

10.Which of the following is true for good coding practice

a)

Use blocking statements for combinational circuits

b)

Use non-blocking statements for sequential circuits

c)

Both a & b

d)

Use null statements

11.

11.CDC (Clock Domain crossing Check) and LEC (Logic equivalence Check) are performed tools using

a)

Mentor Graphics and Cadence

b)

Spyglass and Cadence

c)

Symica DE and Xilinx

d)

These checks must be done physically

12.

12.Cost Effective parameter in IC fabrication

a)

Oxidation

b)

Lithography

c)

Annealing

d)

Photoresist

13.

13.To improve delay performance, one of the following statements is used

a)

Assign statement

b)

Always block

c)

Case statement

d)

If statement

14.

14.Which of the following is self-aligned technology process

a)

All the source, drain and gate formed at a time

b)

Source and drain formed first; gate is formed later

c)

Gate is formed first; source and drain are formed later

d)

Gate, source, and drain are formed one after the other

15.

15.Select dry etch and wet etch techniques for silicon nitride etching

a)

Plasma ashing(PA) and Buffered Oxide Etch(BOE)

b)

Buffered Oxide Etch(BOE) and Plasma ashing(PA)

c)

Buffered Hydrofluoric acid(BHF) and Buffered Oxide Etch(BOE)

d)

Silicon nitride cannot be etched using above techniques

16.

16.Profilometry is used for one of the following

a)

To apply photoresist

b)

To perform lithography

c)

To estimate the top film thickness

d)

To calculate area of metal contact

17.

17.Select appropriate device modeling methods mentioned below

a)

Black Box modeling

b)

Subcircuit modeling

c)

Compact modeling

d)

All a&b&c

18.

18.Which of the following is the package density for VLSI technology

a)

10 gates to 100 gates

b)

10000 gates and above

c)

1000 gates to 10000 gates

d)

100 gates to 1000 gates

19.

19.Select appropriate acronym for “ASIC”.

a)

Asynchronous Synchronous Integrated circuit

b)

Application Simulated Integrated Circuit

c)

Application Specific Integrated Circuit

d)

Automatic Synthesizable Integrated Circuit

20.

20.Which of the following is false related to FPGA design

a)

Short development time

b)

Low NRE costs

c)

The design size is limited

d)

Supports complex design

21.

21.Select appropriate expression for FIR filter

a)

y(n) =k=0Nh(k)x(nk)y\left(n\right)\ =\sum_{k=0}^Nh\left(k\right)x\left(n-k\right)

b)

y(n) =k=0N1h(k)x(nk)y\left(n\right)\ =\sum_{k=0}^{N-1}h\left(k\right)x\left(n-k\right)

c)

y(n) =k=0Nh(nk)x(n)y\left(n\right)\ =\sum_{k=0}^Nh\left(n-k\right)x\left(n\right)

d)

y(n) =k=0N1h(n1)x(nk)y\left(n\right)\ =\sum_{k=0}^{N-1}h\left(n-1\right)x\left(n-k\right)

22.

22.Select appropriate acronym for “BGR”

a)

Bandwith to Gain Ratio

b)

Band Gap Reference

c)

Base Gain Reference

d)

Balanced Gate Reference

23.

23.Which one of the following is sub circuit in Analog to digital conversion

a)

Store and halt circuit

b)

Sample and hold circuit

c)

Smoothing circuit

d)

Synchronizing circuit

24.

24.Which of the following is not a functional block of Phase Locked Loop

a)

Loop filter

b)

Voltage Controlled Oscillator

c)

RF amplifier

d)

Phase Detector

25.

25.In CMOS fabrication technology, Photoresist is exposed to

a)

Fluorescent light

b)

Ultraviolet light

c)

InfraRed light

d)

Visible light