WorksheetsPower Electronics - 1
Total questions: 20
Worksheet time: 10mins
For similar power rating of the switching device, which one is faster
Power MOSFET
IGBT
GTO
SCR
The arrow on the symbol of MOSFET indicates that
it is a N-channel MOSFET
the direction of electrons
the direction of conventional current flow
that it is a P-channel MOSFET
Which devices do not belong to the transistor family?
IGBT
MOSFET
GTO
BJT
If the cathode of an SCR is made positive with respect to the anode & no gate current is applied
then
all the junctions are reversed biased
all the junctions are forward biased
only the middle junction is forward biased
only the middle junction is reversed biased
At present, state-of-the-art semiconductor devices are being manufactured using
Semiconducting Diamond
Gallium-Arsenide
Germanium
Silicon-Carbide
In case of a practical p-n junction diode, the rise in the junction temperature
decreases the width of the depletion region
increases the barrier potential
increases the width of the depletion region
width of the depletion region increases but the barrier potential remains constant
In a Schottky diode, the Aluminium metal acts as a
anode
cathode
gate
common terminal
If the doping levels of the semiconductor is increased, then the width of the depletion layer
increases
decreases
is unchanged
keeps oscillating
Which one of the following Power semi-conductor devices has bidirectional current capability
SCR
MOSFET
TRIAC
IGBT
For a power transistor, if the forward current gain α = 0.97, then β is
0.03
2.03
49.24
32.33
Which is the Power semiconductor device having easy drive features?
GTO
MOSFET
SCR
IGBT
Which is the Power semiconductor device having highest voltage / current ratings?
IGBT
MOSFET
SCR
MCT
Which is the Power semiconductor device having Gate-turn off capability with regenerative
features?
GTO
MOSFET
SIT
SCR
Which is the Power semiconductor device having easy drive and high power handling
capability?
GTO
Power Diode
SCR
IGBT
For a given forward current the reverse recovery time of a Power diode ______________
with the rate of decrease of the forward current.
is constant
increases
decreases
overshoots
BJT has ______________ switching loss and______________ conduction loss.
lower, lower
higher, lower
lower, higher
higher, higher
In case of Thyristor which expression is correct?
Latching current > Holding current
Latching current < Holding current
Latching current = Holding current
None of the above
The forward i-v characteristics of a GTO is similar to that of a ______________
MOSFET
Power Diode
IGBT
SCR
A power diode with small softness factor (S-factor) has
small oscillatory over voltages
large oscillatory over voltages
large peak reverse current
small peak reverse current
Latching current for an SCR is 100 mA, DC source of 200 V is also connected from the
SCR to the L load. Compute the minimum width of the gate pulse required to turn on the
device. Take L = 0.2 H.
50 μsec
150 μsec
100 μsec
200 μsec
