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Power Electronics - 1

Total questions: 20

Worksheet time: 10mins

Name
Class
Date
1.

For similar power rating of the switching device, which one is faster

a)

Power MOSFET

b)

IGBT

c)

GTO

d)

SCR

2.

The arrow on the symbol of MOSFET indicates that

a)

it is a N-channel MOSFET

b)

the direction of electrons

c)

the direction of conventional current flow

d)

that it is a P-channel MOSFET

3.

Which devices do not belong to the transistor family?

a)

IGBT

b)

MOSFET

c)

GTO

d)

BJT

4.

If the cathode of an SCR is made positive with respect to the anode & no gate current is applied

then

a)

all the junctions are reversed biased

b)

all the junctions are forward biased

c)

only the middle junction is forward biased

d)

only the middle junction is reversed biased

5.

At present, state-of-the-art semiconductor devices are being manufactured using

a)

Semiconducting Diamond

b)

Gallium-Arsenide

c)

Germanium

d)

Silicon-Carbide

6.

In case of a practical p-n junction diode, the rise in the junction temperature

a)

decreases the width of the depletion region

b)

increases the barrier potential

c)

increases the width of the depletion region

d)

width of the depletion region increases but the barrier potential remains constant

7.

In a Schottky diode, the Aluminium metal acts as a

a)

anode

b)

cathode

c)

gate

d)

common terminal

8.

If the doping levels of the semiconductor is increased, then the width of the depletion layer

a)

increases

b)

decreases

c)

is unchanged

d)

keeps oscillating

9.

Which one of the following Power semi-conductor devices has bidirectional current capability

a)

SCR

b)

MOSFET

c)

TRIAC

d)

IGBT

10.

For a power transistor, if the forward current gain α = 0.97, then β is

a)

0.03

b)

2.03

c)

49.24

d)

32.33

11.

Which is the Power semiconductor device having easy drive features?

a)

GTO

b)

MOSFET

c)

SCR

d)

IGBT

12.

Which is the Power semiconductor device having highest voltage / current ratings?

a)

IGBT

b)

MOSFET

c)

SCR

d)

MCT

13.

Which is the Power semiconductor device having Gate-turn off capability with regenerative

features?

a)

GTO

b)

MOSFET

c)

SIT

d)

SCR

14.

Which is the Power semiconductor device having easy drive and high power handling

capability?

a)

GTO

b)

Power Diode

c)

SCR

d)

IGBT

15.

For a given forward current the reverse recovery time of a Power diode ______________

with the rate of decrease of the forward current.

a)

is constant

b)

increases

c)

decreases

d)

overshoots

16.

BJT has ______________ switching loss and______________ conduction loss.

a)

lower, lower

b)

higher, lower

c)

lower, higher

d)

higher, higher

17.

In case of Thyristor which expression is correct?

a)

Latching current > Holding current

b)

Latching current < Holding current

c)

Latching current = Holding current

d)

None of the above

18.

The forward i-v characteristics of a GTO is similar to that of a ______________

a)

MOSFET

b)

Power Diode

c)

IGBT

d)

SCR

19.

A power diode with small softness factor (S-factor) has

a)

small oscillatory over voltages

b)

large oscillatory over voltages

c)

large peak reverse current

d)

small peak reverse current

20.

Latching current for an SCR is 100 mA, DC source of 200 V is also connected from the

SCR to the L load. Compute the minimum width of the gate pulse required to turn on the

device. Take L = 0.2 H.

a)

50 μsec

b)

150 μsec

c)

100 μsec

d)

200 μsec