WorksheetsQuiz on Semiconductors and Diodes
Total questions: 28
Worksheet time: 14mins
What happens to the conductivity of an intrinsic semiconductor as the temperature increases?
Increases
Decreases
Remains constant
Becomes zero
In a PN junction diode, the depletion region is formed due to the recombination of:
Electrons only
Holes only
Electrons and holes
Ions
The capacitance in a PN junction diode under reverse bias is primarily due to:
Diffusion capacitance
Junction capacitance
Transition capacitance
Stray capacitance
The current in an ideal diode when reverse biased is:
Infinite
Zero
Very large
Very small
The constant voltage drop model of a diode assumes a voltage drop of approximately:
0.7 V
1 V
0.3 V
0 V
In a diode, the breakdown that occurs due to high electric field at the junction is:
Avalanche breakdown
Zener breakdown
Thermal breakdown
High voltage breakdown
The forward bias voltage of a silicon diode is typically:
0.3 V
0.7 V
1 V
2.2 V
In a PN junction, the width of the depletion region:
Decreases with reverse bias
Increases with forward bias
Decreases with forward bias
Remains constant
The reverse saturation current of a diode doubles for every:
10°C rise in temperature
20°C rise in temperature
30°C rise in temperature
40°C rise in temperature
Which of the following is not a diode model used in circuit analysis?
Exponential model
Small-signal model
Constant voltage drop model
Linear model
Zener diodes are primarily used as:
Amplifiers
Voltage regulators
Rectifiers
Oscillators
In a half-wave rectifier, the ripple frequency for a 50 Hz AC input is:
25 Hz
50 Hz
100 Hz
200 Hz
The peak inverse voltage (PIV) in a full-wave rectifier is:
2Vmax
Vmax
Vmin
Vmax/2
The function of a clamping circuit is to:
Rectify AC signals
Amplify AC signals
Shift the DC level of a signal
Limit the signal voltage
The main difference between a Schottky diode and a regular PN junction diode is:
Reverse breakdown voltage
Forward voltage drop
Leakage current
Transition capacitance
In a bridge rectifier, the number of diodes conducting during each half cycle is:
1
2
3
4
Which type of diode is commonly used in voltage doubling circuits?
Schottky diode
Zener diode
Varactor diode
PN junction diode
Which of the following is a unidirectional device?
UJT
LED
Photodiode
Zener diode
In a full-wave rectifier, the ripple factor is:
Higher than that of a half-wave rectifier
Lower than that of a half-wave rectifier
Equal to that of a half-wave rectifier
Zero
The maximum efficiency of a half-wave rectifier is approximately:
81%
40.6%
67.7%
50%
Which mode of BJT operation is used for amplification?
Cutoff
Saturation
Active
Breakdown
In a common-emitter configuration, the phase shift between input and output signals is:
0°
45°
90°
180°
The Early effect in a BJT results in:
Increase in base current
Increase in collector current
Decrease in current gain
Decrease in emitter current
The current gain in a common-base configuration is called:
α (alpha)
β (beta)
γ (gamma)
δ (delta)
Which biasing method offers the best stability in BJT circuits?
Fixed bias
Voltage-divider bias
Collector feedback bias
Base bias
A MOSFET operates in the saturation region when:
VGS > Vth and VDS Vth and VDS ≥ (VGS - Vth)
VGS 0
VGS Vth and VDS ≥ (VGS - Vth)
The threshold voltage in a MOSFET is the voltage at which:
The source current is maximum
A conductive channel forms between the source and drain
The gate current is maximum
The MOSFET enters the saturation region
The transconductance (gm) of a MOSFET is defined as:
ΔVGS / ΔID
ΔID / ΔVGS
ΔVDS / ΔID
ΔID / ΔVDS
