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Quiz on Semiconductors and Diodes

Total questions: 28

Worksheet time: 14mins

Name
Class
Date
1.

What happens to the conductivity of an intrinsic semiconductor as the temperature increases?

a)

Increases

b)

Decreases

c)

Remains constant

d)

Becomes zero

2.

In a PN junction diode, the depletion region is formed due to the recombination of:

a)

Electrons only

b)

Holes only

c)

Electrons and holes

d)

Ions

3.

The capacitance in a PN junction diode under reverse bias is primarily due to:

a)

Diffusion capacitance

b)

Junction capacitance

c)

Transition capacitance

d)

Stray capacitance

4.

The current in an ideal diode when reverse biased is:

a)

Infinite

b)

Zero

c)

Very large

d)

Very small

5.

The constant voltage drop model of a diode assumes a voltage drop of approximately:

a)

0.7 V

b)

1 V

c)

0.3 V

d)

0 V

6.

In a diode, the breakdown that occurs due to high electric field at the junction is:

a)

Avalanche breakdown

b)

Zener breakdown

c)

Thermal breakdown

d)

High voltage breakdown

7.

The forward bias voltage of a silicon diode is typically:

a)

0.3 V

b)

0.7 V

c)

1 V

d)

2.2 V

8.

In a PN junction, the width of the depletion region:

a)

Decreases with reverse bias

b)

Increases with forward bias

c)

Decreases with forward bias

d)

Remains constant

9.

The reverse saturation current of a diode doubles for every:

a)

10°C rise in temperature

b)

20°C rise in temperature

c)

30°C rise in temperature

d)

40°C rise in temperature

10.

Which of the following is not a diode model used in circuit analysis?

a)

Exponential model

b)

Small-signal model

c)

Constant voltage drop model

d)

Linear model

11.

Zener diodes are primarily used as:

a)

Amplifiers

b)

Voltage regulators

c)

Rectifiers

d)

Oscillators

12.

In a half-wave rectifier, the ripple frequency for a 50 Hz AC input is:

a)

25 Hz

b)

50 Hz

c)

100 Hz

d)

200 Hz

13.

The peak inverse voltage (PIV) in a full-wave rectifier is:

a)

2Vmax

b)

Vmax

c)

Vmin

d)

Vmax/2

14.

The function of a clamping circuit is to:

a)

Rectify AC signals

b)

Amplify AC signals

c)

Shift the DC level of a signal

d)

Limit the signal voltage

15.

The main difference between a Schottky diode and a regular PN junction diode is:

a)

Reverse breakdown voltage

b)

Forward voltage drop

c)

Leakage current

d)

Transition capacitance

16.

In a bridge rectifier, the number of diodes conducting during each half cycle is:

a)

1

b)

2

c)

3

d)

4

17.

Which type of diode is commonly used in voltage doubling circuits?

a)

Schottky diode

b)

Zener diode

c)

Varactor diode

d)

PN junction diode

18.

Which of the following is a unidirectional device?

a)

UJT

b)

LED

c)

Photodiode

d)

Zener diode

19.

In a full-wave rectifier, the ripple factor is:

a)

Higher than that of a half-wave rectifier

b)

Lower than that of a half-wave rectifier

c)

Equal to that of a half-wave rectifier

d)

Zero

20.

The maximum efficiency of a half-wave rectifier is approximately:

a)

81%

b)

40.6%

c)

67.7%

d)

50%

21.

Which mode of BJT operation is used for amplification?

a)

Cutoff

b)

Saturation

c)

Active

d)

Breakdown

22.

In a common-emitter configuration, the phase shift between input and output signals is:

a)

b)

45°

c)

90°

d)

180°

23.

The Early effect in a BJT results in:

a)

Increase in base current

b)

Increase in collector current

c)

Decrease in current gain

d)

Decrease in emitter current

24.

The current gain in a common-base configuration is called:

a)

α (alpha)

b)

β (beta)

c)

γ (gamma)

d)

δ (delta)

25.

Which biasing method offers the best stability in BJT circuits?

a)

Fixed bias

b)

Voltage-divider bias

c)

Collector feedback bias

d)

Base bias

26.

A MOSFET operates in the saturation region when:

a)

VGS > Vth and VDS Vth and VDS ≥ (VGS - Vth)

b)

VGS 0

c)

VGS Vth and VDS ≥ (VGS - Vth)

27.

The threshold voltage in a MOSFET is the voltage at which:

a)

The source current is maximum

b)

A conductive channel forms between the source and drain

c)

The gate current is maximum

d)

The MOSFET enters the saturation region

28.

The transconductance (gm) of a MOSFET is defined as:

a)

ΔVGS / ΔID

b)

ΔID / ΔVGS

c)

ΔVDS / ΔID

d)

ΔID / ΔVDS