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VLSI Technology Quiz

Total questions: 10

Worksheet time: 5mins

Name
Class
Date
1.

The p-type epitaxial layer grown over an n-type substrate for fabricating a bipolar transistor will function as?

a)

The emitter of a p-n-p transistor

b)

The collector of a p-n-p transistor

c)

The collector contact for a p-n-p transistor

d)

The base of an n-p-n transistor

2.

An MSI chip contains____ components embedded on it.

a)

greater than 10000

b)

lesser than 10

c)

greater than 10 and less than 100

d)

lesser than 1000 and greater than 100

3.

In the fabrication process, SiO2 acts as a/an?

a)

Isolation purpose

b)

Mask

c)

Insulator

d)

All of these

4.

The purpose of Design for Test (DFT) process in ASIC design flow is?

a)

To capture functional errors

b)

To capture timing violations

c)

For radiation mitigation

d)

To capture manufacturing defects

5.

What is the range of components in Medium Scale Integration (MSI)?

a)

10,000 to 99,999

b)

100 to 1000

c)

10 to 100

d)

< 12

6.

What does epitaxy refer to?

a)

The process of doping

b)

The isolation of transistors

c)

The deposition of an overlayer on a crystalline substrate

d)

The etching of silicon

7.

Which of the following is NOT a scale of integration?

a)

Massive Scale Integration (MSI)

b)

Small-Scale Integration (SSI)

c)

Medium Scale Integration (MSI)

d)

Ultra Large Scale Integration (ULSI)

8.

What is the primary function of SiO2 in semiconductor fabrication?

a)

To act as a hard mask for doping

b)

To enhance conductivity

c)

To increase thermal conductivity

d)

To serve as a substrate

9.

Which technique is used in DFT to facilitate testing after fabrication?

a)

Scan path insertion

b)

Physical design

c)

Circuit simulation

d)

Logic synthesis

10.

What is the primary benefit of using a p-type epitaxial layer over an n-type substrate?

a)

Reduced doping control

b)

Increased collector resistance

c)

Higher breakdown voltage

d)

Lower breakdown voltage