The depletion region becomes narrow in reverse bias.

In reverse bias, a diode conducts a large current flow.

Reverse bias causes the diode to act as a short circuit.

In reverse bias, a diode exhibits a wide depletion region, minimal current flow, and a potential for breakdown at high reverse voltages.

The threshold voltage is significant as it determines the point at which a diode begins to conduct in forward bias.

The threshold voltage is the same for all diodes regardless of type.

The threshold voltage is irrelevant in forward bias.

The threshold voltage indicates the maximum reverse bias voltage.

During reverse bias, the diode conducts a large forward current.

During reverse bias, the current flow in a PN junction diode is minimal, primarily consisting of a small leakage current due to minority carriers.

The current flow is constant and high regardless of biasing.

Reverse bias causes the diode to short circuit and allow maximum current.

Increased reverse voltage reduces the depletion region.

Higher reverse voltage improves diode conductivity.

Reverse voltage has no effect on leakage current.

Increased reverse voltage widens the depletion region, increases leakage current, and may lead to breakdown.