WorksheetsBJT_FET
Total questions: 5
Worksheet time: 3mins
Name
Class
Date
1.
An enhancement type NMOS transistor with VTH=0.7V and source terminal grounded and 1.5V applied to the gate. In what region does the device operate for VD = 0.5V
a)
Cut off region
b)
Saturation region
c)
Triode region
d)
None of the above
2.
Which of the following BJT configuration has the highest Power Gain?
a)
Common Collector
b)
Common Emitter
c)
Common Base
d)
None of the above
3.
In a Common Base Configuration, BJT has ___input impedance and ___output impedance
a)
high, high
b)
low, high
c)
low, low
d)
high, low
4.
How many degree phases have been shifted from input to output in common emitter configuration?
a)
0 degree
b)
90 degree
c)
180 degree
d)
220 degree
5.
For a transistor connected in common base connection, collector current is 0.95mA and base current is 0.05mA. Find the value of α:
a)
1.00
b)
0.5
c)
0.95
d)
0.05
100 %
