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WorksheetsCHAPTER 6 MODEL OF ANALOG IC DESIGN
Total questions: 26
Worksheet time: 2mins
Name
Class
Date
1.
Analog integrated circuit design primarily relies on
a)
Experience and knowledge
b)
Automation tools
c)
Mathematical models
d)
All of the above
2.
Long-channel MOSFET models use which assumption in their MOSFET formulas?
a)
Ohm’s Law
b)
Square Law
c)
Kirchhoff’s Law
d)
Faraday’s Law
3.
Parasitic capacitance in a MOSFET is caused by
a)
Charge accumulation in the oxide layer
b)
Temperature changes
c)
Short-channel effects
d)
Contact between metal layers
4.
Short-channel effects impact
a)
Threshold voltage
b)
Parasitic capacitance
c)
Output resistance
d)
All of the above
5.
The SPICE model of a MOSFET is used for
a)
Layout design
b)
Physical verification
c)
Simulation and performance analysis
d)
Chip packaging
6.
In analog integrated circuit design, reducing the supply voltage affects
a)
Increased circuit complexity
b)
Reduced circuit performance
c)
Increased output resistance
d)
Increased noise in the circuit
7.
The body effect in a MOSFET is caused by
a)
Voltage difference between the source and substrate
b)
Change in current through the drain
c)
Change in capacitance
d)
Change in resistance
8.
The threshold voltage (V_TH) of a MOSFET depends on
a)
Doping concentration in the substrate
b)
Thickness of the oxide layer
c)
Voltage between the source and substrate
d)
All of the above
9.
When a MOSFET operates in the saturation region, the drain current (I_D) depends on
a)
V_DS
b)
V_GS
c)
V_TH
d)
V_SB
10.
The small-signal model of a MOSFET is used for
a)
Layout design
b)
DC operation analysis
c)
AC gain calculation
d)
Thermal simulation
11.
The DIBL (Drain-Induced Barrier Lowering) effect causes
a)
Increased threshold voltage
b)
Decreased threshold voltage
c)
Increased current
d)
Decreased current
12.
The output resistance of a MOSFET in the saturation region is calculated as
a)
R = V/I
b)
R = ÏL/A
c)
R = 1/(λI_D)
d)
R = μ_n C_ox (W/L)
13.
The body effect causes the threshold voltage of a MOSFET to
a)
Increase
b)
Decrease
c)
Remain unchanged
d)
Change unpredictably
14.
The transition frequency (f_T) of a MOSFET is the frequency at which
a)
Current gain equals 1
b)
Threshold voltage equals 0
c)
Output resistance equals 0
d)
Gate-to-source capacitance equals 0
15.
Short-channel effects in a MOSFET cause
a)
Increased threshold voltage
b)
Decreased threshold voltage
c)
Increased output resistance
d)
Increased gate-to-source capacitance
16.
In the small-signal model of a MOSFET, the transconductance (g_m) is
a)
The ratio between gate voltage and gate current
b)
The ratio between gate voltage and source current
c)
The ratio between gate voltage and drain current
d)
The ratio between source voltage and drain current
17.
The BSIM model of a MOSFET is primarily used for
a)
Layout design
b)
Simulation and analysis of MOSFET operation
c)
AC and DC gain calculation
d)
Physical verification
18.
The body effect increases the threshold voltage of a MOSFET due to
a)
Voltage difference between the source and substrate
b)
Change in current through the drain
c)
Change in capacitance
d)
Change in resistance
19.
In the EKV model, the most important parameter for determining MOSFET operation is
a)
Threshold voltage
b)
Output current
c)
Channel resistance
d)
Gate-to-source capacitance
20.
The gate-to-source capacitance (C_GS) in a MOSFET in the triode region depends on
a)
V_GS
b)
V_DS
c)
V_TH
d)
V_SB
21.
The gate-to-source capacitance (C_GS) in a MOSFET in the cutoff region primarily depends on
a)
Channel length
b)
Channel width
c)
V_DS
d)
V_GS
22.
Short-channel effects cause
a)
Increased MOSFET threshold voltage
b)
Decreased MOSFET threshold voltage
c)
Unchanged MOSFET threshold voltage
d)
Unstable MOSFET threshold voltage
23.
Short-channel effects in a MOSFET lead to
a)
Reduced thermal stability
b)
Increased threshold voltage
c)
Decreased current
d)
Increased conductivity
24.
In the saturation region, the threshold voltage (V_TH) of a MOSFET may change due to
a)
Body effect
b)
Short-channel effect
c)
DIBL effect
d)
All of the above
25.
Parasitic capacitance in a MOSFET is caused by
a)
Charge accumulation in the oxide layer
b)
Temperature changes
c)
Short-channel effects
d)
Contact between metal layers
26.
Short-channel effects impact
a)
Threshold voltage
b)
Parasitic capacitance
c)
Output resistance
d)
All of the above
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