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MCQs on BJT Biasing Circuits - II

Total questions: 10

Worksheet time: 5mins

Name
Class
Date
1.

Which of the following is the most temperature-stable BJT biasing technique?

a)

Fixed Bias

b)

Collector to Base Bias

c)

Voltage Divider Bias

d)

Emitter Follower Bias

2.

What is the primary advantage of voltage divider biasing?

a)

It reduces power consumption

b)

It minimizes the need for capacitors

c)

It makes the Q-point independent of β

d)

It increases current gain

3.

In the exact analysis of voltage divider bias, what does Rth stand for?

a)

Total Resistance across the collector

b)

Resistance across emitter

c)

Parallel combination of R1 and R2

d)

Series combination of RC and RE

4.

Which of the following parameters increases with an increase in temperature in a silicon transistor?

a)

VBE

b)

β

c)

IB

d)

VCC

5.

What is the approximate condition for neglecting base current in voltage divider bias analysis?

a)

β RE >> 10 R2

b)

β RB >> 10 R2

c)

β R1 << 10 R2

d)

β RC >> R2

6.

The base voltage VB in approximate analysis of voltage divider bias is given by:

a)

VB = R1 * VCC / (R1 + R2)

b)

VB = R2 * VCC / (R1 + R2)

c)

VB = VCC / (R1 + R2)

d)

VB = VBE + VE

7.

Which equation represents the stability factor with respect to IC0 for fixed bias?

a)

S = β

b)

S = 1 + β

c)

S = β / (1 + β)

d)

S = IC / IB

8.

Stability factor (S) with respect to IC0 in voltage divider bias improves when:

a)

RB/RE is high

b)

RB is very small

c)

RE is increased

d)

β is low

9.

In the voltage divider bias circuit, if β varies, which parameter remains almost constant?

a)

Base current IB

b)

Collector current IC

c)

VBE

d)

VCC

10.

The correct formula for approximate emitter current in voltage divider bias is:

a)

IE = VE / RE

b)

IE = (VCC - VE) / RE

c)

IE = VBE / RB

d)

IE = β * IB