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WorksheetsViva EDC Cycle 1
Total questions: 40
Worksheet time: 20mins
The cut-in voltage of a silicon diode is approximately:
0.3 V
0.5 V
0.7 V
1.2 V
In forward bias, current through a PN junction diode is:
Negligible
Very high
Zero
Constant
The VI characteristic of a diode in reverse bias shows:
Large current
Small leakage current
Zero current
Oscillations
Which diode emits light when forward biased?
Zener
LED
Schottky
Tunnel
The color of LED depends on:
Applied voltage
Bandgap of semiconductor
Current rating
Packaging
In CB configuration, input is applied between:
Base-Collector
Collector-Emitter
Emitter-Base
Base-Emitter
Current gain (α) in CB mode is given by:
IC / IB
IC / IE
IE / IC
IB / IC
Typical value of α is:
>1
0.1-0.3
0.5-0.6
0.9-0.99
Input characteristics of CB transistor resemble:
Diode in forward bias
Diode in reverse bias
Resistor
Zener diode
CB configuration has:
High Rin, High Rout
Low Rin, High Rout
High Rin, Low Rout
Low Rin, Low Rout
The midband gain of CE amplifier is generally:
Flat
Rising
Falling
Zero
The low-frequency cutoff is due to:
Coupling & bypass capacitors
Parasitic capacitances
Transistor β
Power supply
The high-frequency cutoff is mainly due to:
Coupling capacitor
Bypass capacitor
Junction capacitances
Resistors
Bandwidth is defined between:
0 Hz to ∞
Frequencies at -3 dB points
DC to AC
None
Gain-bandwidth product of a transistor amplifier is:
Constant
Zero
Variable
Infinite
The input resistance of JFET is:
Low
Medium
Very high
Zero
Drain current in JFET is controlled by:
Gate current
VGS
VDS
Temperature
When VGS = 0, ID = ?
Zero
IDSS
Infinite
None
Pinch-off voltage (Vp) means:
ID = 0
ID = IDSS
VGS = 0
gm = 0
The transfer characteristic of JFET is:
ID = gm × VGS
ID = α × VGS
ID = IDSS(1 - VGS/Vp)²
ID = β × VDS
MOSFET is a:
Current-controlled device
Voltage-controlled device
Power device
None
In depletion MOSFET, channel exists:
Only when VGS applied
Only at breakdown
Even without gate bias
None
In enhancement MOSFET, channel forms when:
VGS > Vth
VDS applied > ID
Temperature increases
None
Threshold voltage is:
Minimum VGS to form channel
Maximum VDS allowed
Minimum ID
None
MOSFET transconductance (gm) is defined as:
dID/dVGS
dVDS/dID
dID/dVDS
dVGS/dID
Voltage gain of inverting amplifier =
1 + (Rf/Rin)
-Rf/Rin
Rin/Rf
Rf × Rin
Voltage gain of non-inverting amplifier =
Rin/Rf
1 + (Rf/Rin)
-Rf/Rin
None
In inverting amplifier, phase shift is:
0°
90°
180°
360°
Input of non-inverting amplifier is given to:
Inverting terminal
Non-inverting terminal
Both terminals
None
The input resistance of a non-inverting amplifier is:
Very low
Equal to Rin
Very high
Zero
A clipper circuit is used to:
Amplify signals
Remove a portion of waveform
Store energy
Convert AC to DC
Positive clipper removes:
Positive half
Negative half
Both halves
Noise
Negative clipper removes:
Positive half
Negative half
Both halves
None
Biased clipper clips:
Only at zero
At desired reference voltage
Both halves
None
Main component used in clippers is:
Inductor
Capacitor
Diode
Resistor
A full-wave rectifier converts:
AC to DC (both halves)
Only half cycle
DC to AC
None
Efficiency of a full-wave rectifier is:
40.6%
50%
81%
100%
Ripple frequency for 50 Hz input =
25 Hz
50 Hz
100 Hz
200 Hz
PIV of each diode in full-wave rectifier =
Vm
2Vm
Vm/2
None
Advantage of full-wave rectifier over half-wave is:
Less efficiency
Higher PIV stress
Smoother DC output
None
