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Types of Solids

Total questions: 108

Worksheet time: 54mins

Name
Class
Date
1.

Which statement best distinguishes amorphous from crystalline solids?

a)

Amorphous lack long-range order

b)

Crystalline have random bonding directions

c)

Amorphous show perfect periodicity

d)

Crystalline contain no repeating motifs

2.

In a single crystal, how is the lattice orientation distributed?

a)

Random orientation with depth

b)

Alternating orientation in layers

c)

Multiple orientations in grain boundaries

d)

Uniform orientation across bulk

3.

Which feature characterizes polycrystalline solids compared to single crystals?

a)

Zero defects and infinite coherence length

b)

Atoms arranged without short-range order

c)

Single grain throughout sample

d)

Many grains with distinct orientations

4.

Identify the diagram that best represents an amorphous solid’s atomic arrangement.

a)

Irregular packing lacking periodicity

b)

Periodic lattice repeating in all directions

c)

Alternating ordered and disordered layers

d)

Hexagonal pattern with perfect symmetry

5.

Which material property is most sensitive to grain boundaries in polycrystalline solids?

a)

Charge carrier mobility across grains

b)

Speed of light in vacuum

c)

Intrinsic bandgap of the lattice

d)

Avogadro constant of the sample

6.

Select the most accurate comparison of monocrystalline and polycrystalline structures.

a)

Monocrystalline: no order; Polycrystalline: short-range

b)

Monocrystalline: single orientation; Polycrystalline: many

c)

Monocrystalline: many orientations; Polycrystalline: single

d)

Monocrystalline: random packing; Polycrystalline: periodic

7.

Which observation confirms a sample is crystalline rather than amorphous?

a)

Spectrum showing only thermal noise

b)

Broad peaks from random arrangements

c)

No scattering signal

d)

Sharp diffraction peaks indicating periodicity

8.

Why are single crystals preferred over polycrystalline films for semiconductor applications?

a)

Minimized boundary scattering improves transport

b)

Disordered packing yields superior coherence

c)

Increased random disorder enhances resistivity

d)

Grain boundaries create uniform bandgaps

9.

Which statement best defines a crystal lattice?

a)

Regular periodic array of points in space

b)

Random distribution of atoms without order

c)

Finite cluster of molecules forming grains

d)

Single molecule repeating with no translation

10.

What is meant by the basis in a crystal description?

a)

Void regions within the crystal

b)

Angles between the lattice vectors

c)

Edges defining the unit cell size

d)

Atoms or molecules at each lattice point

11.

What is a unit cell?

a)

Largest domain with many grains

b)

Smallest repeating unit in a crystal

c)

Random cluster of atoms

d)

Isolated molecule in a solid

12.

Which set fully specifies the geometry of a unit cell?

a)

One vector and two basis atoms

b)

Four vectors including diagonal

c)

Two vectors and one angle

d)

Three lattice vectors a, b, c

13.

Choose the correct statement about lattice points.

a)

Points are physical atoms present

b)

Points exist only in two dimensions

c)

Each point represents unique chemical environments

d)

Each point has identical surroundings

14.

In NaCl, what combination forms the basis for the crystal structure?

a)

One Cl atom at body center

b)

One Na and one Cl together

c)

Two Na atoms at corners

d)

Three ions forming a triangle

15.

Why is dividing a crystal into unit cells useful?

a)

It creates well-defined repeating building blocks

b)

It converts ionic crystals to covalent bonds

c)

It reduces the number of atoms permanently

d)

It eliminates defects by averaging structures

16.

Which description matches lattice parameters of a unit cell?

a)

Edge lengths a, b, c and angles α, β, γ

b)

Only edge lengths a, b, c without angles

c)

Angles only between diagonals of faces

d)

Volume and mass of the crystal sample

17.

A primitive cell of NaCl is related to which structural concept?

a)

Non-repeating cluster defining grain boundaries

b)

Region containing all possible orientations

c)

Largest symmetric block repeating occasionally

d)

Smallest volume that, when translated, tiles space

18.

What results from combining a lattice with a basis?

a)

An amorphous solid lacking long-range order

b)

A single molecule isolated from its neighbors

c)

A crystal structure with periodic arrangement

d)

A polycrystalline film with random grains

19.

Which statement about two- and three-dimensional lattices is accurate?

a)

Three-dimensional lattices lack identical surroundings

b)

Both have regularly spaced lattice points

c)

Two-dimensional lattices cannot be tiled

d)

Only three-dimensional lattices are periodic

20.

Which choice correctly links symbols to NaCl ions?

a)

Blue dots represent Cl−; red dots represent Na+

b)

Red dots represent Cl−; blue dots represent Na+

c)

Both colors represent Na+ ions only

d)

Colors indicate lattice points without species

21.

Which formula gives the maximum number of electrons in the nth shell of an atom?

a)

Ne equals 4n²

b)

Ne equals 2n³

c)

Ne equals n²/2

d)

Ne equals 2n²

22.

Using Ne = 2n22n^2 , what is the maximum number of electrons in shell n = 3?

a)

Twenty four electrons total

b)

Eighteen electrons total

c)

Sixteen electrons total

d)

Twelve electrons total

23.

A diagram shows concentric shells labeled n = 1 to n = 4. Which statement correctly matches each shell to its maximum electrons?

a)

n=1 has 2, n=2 has 8, n=3 has 18

b)

n=1 has 1, n=2 has 4, n=3 has 9

c)

n=1 has 2, n=2 has 6, n=3 has 12

d)

n=1 has 4, n=2 has 8, n=3 has 16

24.

If an atom has n = 4 as its highest occupied shell, what is the maximum number of electrons that shell could hold?

a)

Thirty two electrons

b)

Thirty six electrons

c)

Twenty electrons

d)

Twenty six electrons

25.

In the band model, what does the energy gap represent between two bands?

a)

Distance between atomic nuclei

b)

Difference in allowed energy levels

c)

Number of free charge carriers

d)

Strength of covalent bonding

26.

Which statement best explains electron behavior in the conduction band?

a)

Electrons remain bound to atoms

b)

Electrons drop into the valence band

c)

Electrons lose charge and become neutral

d)

Electrons move freely through the crystal

27.

Which feature characterizes an insulator in the band diagram?

a)

Partially filled valence band

b)

Large band gap between bands

c)

Small band gap near midgap

d)

Overlapping valence and conduction

28.

Which feature characterizes a conductor in the band diagram?

a)

Isolated conduction band high up

b)

Overlap of valence and conduction

c)

Wide separation of bands

d)

Mid-sized gap around 1 eV

29.

Which material band structure allows moderate conductivity without full overlap?

a)

Gapless Dirac material

b)

Overlapping-band conductor

c)

Large band gap insulator

d)

Small band gap semiconductor

30.

Given Eg ≈ 1.1 eV for silicon, how is Si classified?

a)

Intrinsic semiconductor

b)

Metallic conductor

c)

Electrical insulator

d)

Magnetic material

31.

Which statement compares insulators to semiconductors by their Eg values?

a)

Insulators have identical Eg values

b)

Insulators have much larger Eg

c)

Insulators have slightly smaller Eg

d)

Insulators have overlapping bands

32.

What enables conduction in conductors at room temperature?

a)

Absence of conduction band

b)

Electrons tightly bound in valence

c)

Thermal creation of large gaps

d)

Band overlap providing free states

33.

Which term describes a pure semiconductor with no intentional impurities?

a)

Intrinsic semiconductor material

b)

Degenerate semiconductor crystal

c)

Compound semiconductor alloy

d)

Extrinsic semiconductor material

34.

What is the main purpose of doping a semiconductor?

a)

To improve optical transparency

b)

To strengthen crystal bonds

c)

To increase free electrons or holes

d)

To lower melting temperature

35.

Silicon (Si) and germanium (Ge) are classified as which type of semiconductor before doping?

a)

Intrinsic elemental semiconductors

b)

Extrinsic compound semiconductors

c)

Metallic conductors with impurities

d)

Insulators with no bandgap

36.

If the concentration of donor impurities in silicon increases, what happens to conductivity?

a)

Conductivity remains unchanged

b)

Conductivity decreases due to fewer holes

c)

Conductivity fluctuates

d)

Conductivity increases due to more electrons

37.

Why is silicon more widely used than germanium in semiconductor devices?

a)

Germanium forms stronger covalent bonds

b)

Silicon has more free electrons

c)

Germanium valence electrons need less energy

d)

Silicon valence electrons are in higher energy shells

38.

How many valence electrons do silicon and germanium atoms have?

a)

Two valence electrons each

b)

Three valence electrons each

c)

Five valence electrons each

d)

Four valence electrons each

39.

In which shell are the valence electrons of silicon located compared to germanium?

a)

Both silicon and germanium third shell

b)

Both silicon and germanium fourth shell

c)

Silicon fourth shell, germanium third shell

d)

Silicon third shell, germanium fourth shell

40.

What consequence follows from germanium's valence electrons being at higher energy levels than silicon's?

a)

Silicon requires less energy for electron excitation

b)

Silicon becomes more unstable at high temperatures

c)

Germanium electrons escape with smaller added energy

d)

Germanium forms an intrinsic crystal with no impurities

41.

Why is germanium less stable at high temperatures than silicon?

a)

Its valence electrons are easier to liberate

b)

Its intrinsic crystal contains free electrons

c)

Its lattice lacks covalent bonding strength

d)

It has fewer valence electrons to share

42.

Which statement describes an intrinsic silicon crystal?

a)

Metallic lattice with conduction band

b)

Amorphous solid with random atoms

c)

Doped crystal with extra carriers

d)

Pure crystal with no free electrons

43.

What makes silicon a crystalline solid?

a)

Randomly oriented covalent bonds

b)

Alternating metallic and ionic layers

c)

Presence of free conduction electrons

d)

Definite symmetrical atomic arrangement

44.

In the silicon crystal lattice, what holds neighboring atoms together?

a)

Electrostatic attraction of free ions

b)

Van der Waals forces

c)

Magnetic coupling of spins

d)

Shared electrons in covalent bonds

45.

Which statement best defines one electron volt (eV)?

a)

Work done by one coulomb across one volt

b)

Energy gained by one electron across one volt

c)

Power delivered by one ampere for one second

d)

Energy stored in one proton at rest in vacuum

46.

Convert 5 eV to joules using 1eV=1.602×10−19J1 eV = 1.602 \times 10^{-19} J .

a)

1.60×10^-19 J

b)

8.01×10^-19 J

c)

5.00×10^-19 J

d)

3.20×10^{-19} J

47.

In an intrinsic, unexcited silicon crystal, which band has no electrons?

a)

Conduction band

b)

First band

c)

Valence band

d)

Second band

48.

What is the role of the band gap in the energy band diagram?

a)

Pathway for electron drift under fields

b)

Level populated only at absolute zero

c)

Region of tightly bound core electrons

d)

Region where no electrons can exist

49.

An electron accelerated through 2 V acquires what energy?

a)

9.612×10^{-19} J

b)

3.204×10^{-19} J

c)

1.602×10^-19 J

d)

6.408×10^-19 J

50.

In a semiconductor, when Nora heats the material, thermal excitation moves electrons from the valence band. Where do these excited electrons go to contribute to conduction?

a)

Into the band gap

b)

Into the conduction band

c)

Into deeper core levels

d)

Into the nucleus

51.

In a pure semiconductor at room temperature, what causes some valence electrons to become free conduction electrons?

a)

Heat energy sufficient to cross band gap

b)

Impurity atoms donating extra electrons

c)

Applied electric field accelerating electrons

d)

Photon absorption exceeding bandgap energy

52.

When an electron is excited from the valence band to the conduction band, what remains in the valence band?

a)

A negatively charged vacancy called pit

b)

A proton deficiency called void

c)

A positively charged vacancy called hole

d)

A neutral vacancy called trap

53.

For an intrinsic semiconductor, which relation between carrier concentrations holds true?

a)

n equals p equals ni

b)

n equals p squared

c)

n equals ni minus p

d)

p equals ni minus n

54.

Which parameter in the intrinsic concentration formula ni=BT(3/2)exp(−Eg/2kT)ni = B T^{(3/2)} exp(−Eg / 2kT) represents the bandgap energy?

a)

B, material-dependent constant

b)

Eg, energy separating bands

c)

k, Boltzmann’s constant

d)

T, absolute temperature

55.

Given k = 8.62×10−5eV/K8.62 \times 10^{-5} eV/K , how does increasing temperature affect ni in an intrinsic semiconductor?

a)

ni oscillates periodically with T

b)

ni decreases exponentially with T

c)

ni remains constant with T

d)

ni increases due to T(3/2)T^{(3/2)} and exponent

56.

Which statement best describes a free electron in a semiconductor?

a)

An electron inside the atomic nucleus

b)

An electron trapped at a defect site

c)

An electron in the conduction band mobile

d)

An electron bound within a covalent bond

57.

For silicon at room temperature, which listed value pertains to the material-dependent constant B in the intrinsic concentration expression?

a)

B ≈ 7.3×1015cm−3K−3/27.3 \times 10^{15} cm^{-3} K^{-3/2}

b)

B ≈ 1.12 eV for silicon

c)

B ≈ 8.62 × 10^−5 eV/K

d)

B equals the bandgap energy Eg

58.

Why does each generated free electron correspond to one hole in an intrinsic semiconductor?

a)

Electrons annihilate with phonons

b)

Impurities balance charge by recombination

c)

Charge neutrality requires paired creation

d)

External fields create holes independently

59.

Which statement best explains why intrinsic semiconductors have limited conductivity?

a)

They contain metallic bonds with high mobility

b)

They lack a conduction band entirely

c)

They have few free electrons and holes

d)

They possess excess dopant impurities

60.

What is the primary purpose of doping an intrinsic semiconductor like silicon or germanium?

a)

To convert covalent bonds into metallic bonds

b)

To decrease lattice vibrations and heat

c)

To increase current carriers for conductivity

d)

To remove holes from the valence band

61.

A manufacturer wants to build electronic devices using extrinsic semiconductors. Which step should be taken first to transform intrinsic silicon into a useful material?

a)

Introduce mechanical strain to shift energy bands

b)

Apply strong electric fields to polarize atoms

c)

Add controlled impurities to create n-type or p-type

d)

Cool the crystal to reduce thermal generation

62.

Which pair correctly identifies the two categories of extrinsic semiconductors discussed?

a)

N-type and P-type materials

b)

Donor bands and acceptor bands

c)

Degenerate type and intrinsic type

d)

Metallic type and ionic type

63.

Which impurity type is added to silicon to form an N-type semiconductor?

a)

Pentavalent donor atoms

b)

Trivalent acceptor atoms

c)

Monovalent metallic atoms

d)

Divalent interstitial atoms

64.

In an N-type semiconductor, which particles act as the majority carriers?

a)

Ionized acceptor ions

b)

Thermally generated holes

c)

Free conduction electrons

d)

Bound valence electrons

65.

What term best describes pentavalent atoms like phosphorus when introduced into silicon?

a)

Donor impurity atoms

b)

Intrinsic lattice atoms

c)

Compensating defect centers

d)

Acceptor impurity atoms

66.

A pentavalent atom forms covalent bonds using four valence electrons. What happens to the fifth electron?

a)

It creates a lattice vacancy

b)

It strengthens a bond

c)

It remains tightly bound

d)

It becomes a conduction electron

67.

Identify a common pentavalent element used for N-type doping in silicon.

a)

Arsenic (As)

b)

Gallium (Ga)

c)

Aluminum (Al)

d)

Boron (B)

68.

Which statement about minority carriers in N-type material is correct?

a)

Holes are the minority carriers

b)

Electrons are the minority carriers

c)

Ions are the minority carriers

d)

Excitons are the minority carriers

69.

Where is the donor energy level located relative to the conduction band?

a)

Deep within the valence band

b)

Exactly at the conduction band edge

c)

Just below the conduction band

d)

Midway in the band gap

70.

Typical donor level energy separation is closest to which value in germanium?

a)

Around 0.01 eV

b)

About 1.0 eV

c)

About 0.5 eV

d)

Around 0.1 eV

71.

Why does adding donor impurities reduce the number of holes?

a)

Donor atoms trap holes permanently

b)

More electrons recombine with holes

c)

Valence band empties completely

d)

Band gap becomes significantly larger

72.

Which process explains current conduction in N-type material at room temperature?

a)

Hole drift in valence band

b)

Electron drift in conduction band

c)

Proton drift through lattice

d)

Phonon-assisted hole transport

73.

Select the best description of the symbol n in N-type semiconductor.

a)

Shows normalized electron density

b)

Represents number of dopant atoms

c)

Indicates negative charge carriers

d)

Denotes neutral lattice sites

74.

In the energy band diagram of N-type material, donor levels facilitate which transition?

a)

Excitons to mid-gap states

b)

Ions to forbidden gap

c)

Electrons to conduction band

d)

Holes to valence band

75.

Which impurity type is used to create a p-type semiconductor in silicon?

a)

Trivalent acceptors like boron

b)

Divalent impurities like magnesium

c)

Pentavalent donors like phosphorus

d)

Intrinsic silicon atoms themselves

76.

In a p-type semiconductor, which species are the majority carriers?

a)

Conduction-band electrons

b)

Bound valence electrons

c)

Holes in the valence band

d)

Ionized donor atoms

77.

Why are trivalent dopants called acceptor atoms?

a)

They repel electrons and create depletion regions

b)

They create a deep donor level near conduction band

c)

They accept an electron to complete bonding

d)

They donate extra electrons to the lattice

78.

A boron atom in silicon forms covalent bonds with how many adjacent silicon atoms?

a)

Six neighboring silicon atoms

b)

Four neighboring silicon atoms

c)

Three neighboring silicon atoms

d)

Two neighboring silicon atoms

79.

When a trivalent atom replaces a silicon atom, what immediate effect occurs in bonding?

a)

An extra electron occupies conduction band

b)

No change occurs in carrier concentration

c)

A hole appears due to one electron short

d)

Two holes are generated in the valence band

80.

Which statement best describes minority carriers in a p-type semiconductor?

a)

Electrons thermally excited to conduction band

b)

Holes formed by acceptor ionization

c)

Ionized acceptor cores with positive charge

d)

Excitons bound in the bandgap

81.

Where is the acceptor energy level located relative to the valence band in p-type material?

a)

Below the valence band maximum

b)

Midway across the bandgap

c)

Just above the valence band edge

d)

Deep within the conduction band

82.

What minimal energy process leads to electron transfer to an acceptor level in p-type material?

a)

Very small energy promoting valence electron

b)

Large thermal energy creating donors

c)

Photon absorption causing lattice defects

d)

High-field avalanche ionization

83.

Which dopant among the following is trivalent and suitable for p-type germanium?

a)

Phosphorus (P)

b)

Antimony (Sb)

c)

Indium (In)

d)

Arsenic (As)

84.

In p-type semiconductors, what primarily increases the number of holes?

a)

Donor atoms releasing electrons

b)

Strong magnetic fields aligning spins

c)

Acceptor atoms capturing electrons

d)

Intrinsic recombination dominating

85.

Which band primarily hosts the majority carriers in p-type material?

a)

Acceptor band hosts donors

b)

Forbidden band hosts excitons

c)

Valence band hosts holes

d)

Conduction band hosts electrons

86.

What happens to conduction-band electron population in p-type material under thermal generation?

a)

It vanishes completely

b)

It equals the hole concentration

c)

It remains minority yet present

d)

It becomes the majority carriers

87.

Which impurity type in silicon donates a free electron and creates an N-type semiconductor?

a)

Di-valent neutral atoms

b)

Tri-valent acceptor atoms

c)

Penta-valent donor atoms

d)

Intrinsic silicon atoms

88.

In a P-type semiconductor formed by tri-valent impurities, what is the primary majority carrier?

a)

Photons from dopants

b)

Conduction electrons

c)

Holes in the lattice

d)

Excitons in the crystal

89.

Choose the statement that best contrasts donor and acceptor impurities in doped silicon.

a)

Donors remove electrons, acceptors add holes

b)

Donors add electrons, acceptors create holes

c)

Donors are intrinsic, acceptors are extrinsic

d)

Donors create holes, acceptors add electrons

90.

A silicon crystal is doped with antimony (Sb), a pentavalent atom. Predict the immediate effect on carriers.

a)

Formation of exciton pairs

b)

Increase in hole concentration

c)

Increase in electron concentration

d)

No change in carrier concentration

91.

A tri-valent atom accepts an electron from a neighbor in silicon. What local feature forms at that site?

a)

A conduction electron

b)

A hole state

c)

A bound exciton

d)

A lattice defect

92.

For an intrinsic semiconductor at equilibrium, which equality holds between electron and hole concentrations?

a)

n equals ni divided by p

b)

n equals p minus ni

c)

n equals p equals ni

d)

n equals p times ni

93.

Which parameter in the expression ni=BT(3/2)exp(−Eg/(2kT))ni = B T^{(3/2)} exp(-Eg/(2kT)) primarily captures the material’s band structure separation between valence and conduction bands?

a)

B, a material-dependent constant

b)

Eg, the bandgap energy

c)

k, Boltzmann’s constant

d)

T, the absolute temperature

94.

Using B = 7.3×1015cm−3K−3/27.3\times10^{15} cm^{-3} K^{-3/2} , Eg = 1.12eV1.12 eV , k = 8.62×10−5eV/K8.62\times10^{-5} eV/K , and T = 300K300 K , estimate ni for intrinsic silicon. Choose the closest value.

a)

1.5×1010cm−31.5\times10^{10} cm^{-3}

b)

1.1×1019cm−31.1\times10^{19} cm^{-3}

c)

7.3×1015cm−37.3\times10^{15} cm^{-3}

d)

3.0×10^5 cm^-3

95.

If temperature increases above 300 K while BB and EgE_g remain constant, what happens qualitatively to nin_i according to ni=BT(3/2)exp⁡(−Eg2kT)n_i = B T^{(3/2)} \exp\left(-\frac{E_g}{2kT}\right)

a)

ni oscillates with temperature

b)

ni stays nearly constant

c)

ni decreases due to both factors

d)

ni increases due to both factors

96.

In an n-type semiconductor, which particle acts as the majority carrier as shown in the diagram?

a)

Ionized acceptor ions releasing electrons

b)

Neutral dopant atoms without charge

c)

Electrons contributed by donor atoms

d)

Holes introduced by acceptor atoms

97.

The diagram shows donor ions in n-type and acceptor ions in p-type materials. What is the role of these ions in determining majority carriers?

a)

They trap carriers to reduce conductivity

b)

They set the Fermi level exactly in midgap

c)

They neutralize intrinsic defects only

d)

They provide extra electrons or holes

98.

A wafer is doped p-type as in the right diagram. Under equilibrium, which statement best describes the carrier populations?

a)

Electrons dominate; holes are scarce

b)

Holes dominate; electrons are scarce

c)

Electrons and holes are equal

d)

No free carriers; only fixed ions

99.

In an N-type semiconductor with ND much greater than ni, what is the approximate majority electron concentration nn?

a)

nn ≈ ni/ND

b)

nn ≈ NA

c)

nn ≈ ni

d)

nn ≈ ND

100.

For an N-type semiconductor under ND >> ni, which expression gives the minority hole concentration pn?

a)

pn ≈ ni

b)

pn ≈ NA

c)

pn ≈ ND

d)

pn ≈ ni2/NDni^2/ND

101.

In a P-type semiconductor with NA >> ni, what is the approximate majority hole concentration pp?

a)

pp ≈ NA

b)

pp ≈ ni2/NAni^2/NA

c)

pp ≈ ni

d)

pp ≈ ND

102.

When NA >> ni in a P-type material, the minority electron concentration np is best approximated by which relation?

a)

np ≈ ni2/NAni^2/NA

b)

np ≈ ni

c)

np ≈ NA

d)

np ≈ ND

103.

Which statement correctly identifies majority carriers in N-type and P-type extrinsic semiconductors?

a)

Electrons in both N-type and P-type

b)

Electrons in N-type, holes in P-type

c)

Holes in N-type, electrons in P-type

d)

Holes in both N-type and P-type

104.

The mass-action law in semiconductors states that pn·nn equals which quantity at equilibrium?

a)

NA^2

b)

ND^2

c)

ni^2

d)

ni

105.

Donor atoms primarily contribute which type of carriers in a doped semiconductor?

a)

Excitons

b)

Free electrons

c)

Free holes

d)

Lattice ions

106.

Acceptor atoms in a semiconductor result in which effect at the atomic level?

a)

Accept an electron, creating a hole

b)

Donate an electron to the lattice

c)

Increase intrinsic carrier density

d)

Eliminate thermal generation entirely

107.

If an N-type semiconductor has ND=1×1016 cm−3N_D = 1\times10^{16} \text{ cm}^{-3} and ni=1×1010 cm−3n_i = 1\times10^{10} \text{ cm}^{-3} , estimate pnp_n .

a)

pn ≈ 1×1010cm−31\times10^{10} cm^{-3}

b)

pn ≈ 1×1016cm−31\times10^{16} cm^{-3}

c)

pn ≈ 1×104cm−31\times10^4 cm^{-3}

d)

pn ≈ 1×106cm−31\times10^6 cm^{-3}

108.

A P-type sample has NA = 5×1017cm−35\times10^{17} cm^{-3} and ni = 1×1010cm−31\times10^{10} cm^{-3} . Which is the best estimate for np?

a)

np ≈ 1×108cm−31\times10^8 cm^{-3}

b)

np ≈ 2×1022\times10^2 cm^{-3}

c)

np ≈ 1×1010cm−31\times10^{10} cm^{-3}

d)

np ≈ 5×1017cm−35\times10^{17} cm^{-3}

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