Diode

Main phenomenons associated with formation of p-n junctions are

• Drift only

• Diffusion only

• Diffusion and Drift

• only doping

The region on either side of the junction which becomes free from the mobile charge carriers is called

• Energy gap region

• Charge free region

• Diffusion region

• Depletion region

Potential barrier developed in the depletion region depends on ( choose two correct options)

• Dopant concentration

• Temperature

• intrinsic carrier concentration

• type of material

Magnitude of current developed during diffusion and drift respectively are

• Micro and mA

• nA and mA

• mA and Micro ampere

• Micro and nA

What are ripples

• DC supplied by a cell

• AC component in household circuits

• AC component that remains in rectified circuit

• AC component that remains in filtered circuit

Device used for filter circuit is

• Diode

• Capacitor

• Transistor

• Amplifier

The main constructional difference between Half wave and Full wave rectifier

• Number of parts used in 1^st type is Half of parts used in 2^nd type

• Some kind of half wave is used in 1^st type

• use of Centre tapping in case of 1st type and not in 2nd type

• use of Centre tapping in case of 2^nd type and not in 1^st type

Characteristics of a diode that helps in rectification

• Allows Unidirectional flow of current

• Allows Bidirectional flow of current

• Opposes the flow of current

• conducts in reverse biased

The output wave form of a full wave rectifier is

• an AC voltage

• an DC voltage

• Zero

• a pulsating unidirectional voltage

The p-n junction which generates an emf when solar radiation falls on it, with no external bias applied, is a

• Light Emitting diode

• Photodiode

• Solar cell

• Zener Diode