Semiconductor

2. The forbiddenn energy gap for Germanium is of the order of

• (a) 0.7 eV
• (b) 0.3 eV
• (c) 1.1 eV
• (d) 10 eV

The reverse saturation current in a PN Junction diode is only due to 

• majority carriers
• minority carriers
• acceptor ions
• donor ions

The process of adding an impurity to an intrinsic semiconductor is called

• Doping

• Ionization

• Recombination

• Atomic modification

A full-wave rectifier consist of _______________________________

• 1 Diode

• 2 Diode

• 3 Diode

• 4 Diode

The minority carriers in P-type silicon are called _________________

• Neutron

• Proton

• Electron

• Hole

Basic building blocks of all electronic circuits are

• Devices in which there is a flow of electrons

• devices in which there is no flow of electrons

• devices in which there is a controlled flow of electrons

• devices in which there is an uncontrolled flow of electrons

conductivity of semiconductor increases with increase in temperature, because

• number density of free charge carriers increases

• relaxation time increases

• both number density of free charge carriers and relaxation time increases

• number density of free charge carriers increases relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density

conductivity of semiconductor increases with increase in temperature, because

• number density of free charge carriers increases

• relaxation time increases

• both number density of free charge carriers and relaxation time increases

• number density of free charge carriers increases relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density

Let n_p and n_e be the number density of holes and conduction electrons respectively in a semiconductor. Then,

• n_{p >} n_e in an intrinsic semiconductor, I < I_p + I_e

• n_{p =} n_e in an extrinsic semiconductor, I > I_p + I_e

• n_{p =} n_e in an intrinsic semiconductor, I = I_p + I_e

• n_{p >} n_e in an intrinsic semiconductor, I = 0( Here, I_p = current due to holes,I_e= current due to electrons, I= total current)

Tags

NGSS.HS-PS3-5

During formation of p-n junction

• an electron diffuses from n to p side

• a hole diffuses from p to n side

• a hole diffuses from n to p side

• an electron diffuses from p to n side