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ECE411_NMOS

Authored by Sameh Ibrahim

Science

University

5 Questions

Used 3+ times

ECE411_NMOS
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1.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Which mask determines the MOSFET width?

AA mask

Poly mask

CC mask

M1 mask

2.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Which mask determines the length of the MOSFET?

AA mask

Poly mask

CC mask

M1 mask

3.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Patterns are first drawn by ultraviolet on which layer?

Si substrate

Silicon Oxide

Photoresist

Metal

4.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

In a poly-gate technology, which statement is true?

The drain is fabricated before the source and gate.

The source is fabricated before the drain and gate.

The gate is fabricated before the drain and source.

The drain, gate, and source are fabricated together.

5.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

The following is not a fabrication process

Ion Implantation

Etching

Oxidation

Fermentation

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